Geodesic
Auger-transition of electrons to the condensed state on the dislocations in semiconductors
Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 1 (2005), pp. 40-47.

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Auger transition of a free electron to an edge dislocation is considered in the $n$-type semiconductor, accompanied by lattice polarization and formation of self-localized state along the dislocation (so-called "condenson"). The capture probability is obtained, as a function of dislocation fill-factor by electrons, energy level depth, and lattice polarization energy. 
@article{UZERU_2005_1_a4,
     author = {A. S. Musaelyan},
     title = {Auger-transition of electrons to the condensed state on the dislocations in semiconductors},
     journal = {Proceedings of the Yerevan State University. Physical and mathematical sciences},
     pages = {40--47},
     publisher = {mathdoc},
     number = {1},
     year = {2005},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/UZERU_2005_1_a4/}
}
TY  - JOUR
AU  - A. S. Musaelyan
TI  - Auger-transition of electrons to the condensed state on the dislocations in semiconductors
JO  - Proceedings of the Yerevan State University. Physical and mathematical sciences
PY  - 2005
SP  - 40
EP  - 47
IS  - 1
PB  - mathdoc
UR  - http://geodesic.mathdoc.fr/item/UZERU_2005_1_a4/
LA  - ru
ID  - UZERU_2005_1_a4
ER  - 
%0 Journal Article
%A A. S. Musaelyan
%T Auger-transition of electrons to the condensed state on the dislocations in semiconductors
%J Proceedings of the Yerevan State University. Physical and mathematical sciences
%D 2005
%P 40-47
%N 1
%I mathdoc
%U http://geodesic.mathdoc.fr/item/UZERU_2005_1_a4/
%G ru
%F UZERU_2005_1_a4
A. S. Musaelyan. Auger-transition of electrons to the condensed state on the dislocations in semiconductors. Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 1 (2005), pp. 40-47. http://geodesic.mathdoc.fr/item/UZERU_2005_1_a4/

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