Geodesic
Auger-transition of electrons to the condensed state on the dislocations in semiconductors
Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 1 (2005), pp. 40-47

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Auger transition of a free electron to an edge dislocation is considered in the $n$-type semiconductor, accompanied by lattice polarization and formation of self-localized state along the dislocation (so-called "condenson"). The capture probability is obtained, as a function of dislocation fill-factor by electrons, energy level depth, and lattice polarization energy. 
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A. S. Musaelyan. Auger-transition of electrons to the condensed state on the dislocations in semiconductors. Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 1 (2005), pp. 40-47. http://geodesic.mathdoc.fr/item/UZERU_2005_1_a4/