Geodesic
Auger-transition of electrons to the condensed state on the dislocations in semiconductors
Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 1 (2005), pp. 40-47 
A. S. Musaelyan. Auger-transition of electrons to the condensed state on the dislocations in semiconductors. Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 1 (2005), pp. 40-47. http://geodesic.mathdoc.fr/item/UZERU_2005_1_a4/
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Voir la notice de l'article provenant de la source Math-Net.Ru

Auger transition of a free electron to an edge dislocation is considered in the $n$-type semiconductor, accompanied by lattice polarization and formation of self-localized state along the dislocation (so-called "condenson"). The capture probability is obtained, as a function of dislocation fill-factor by electrons, energy level depth, and lattice polarization energy.

[1] D.J. Robbins, “Aspects of the Theory of Impact Ionization in Semiconductors (III)”, Phys. Stat Solidi B, 98:11–36 (1980), 1186 | DOI

[2] D.J. Robbins J. Phys. C: Solid State Phys., “Multiphonon broadening of impact ionisation and Auger recombination involving traps in semiconductors”, J. Phys. C: Solid State Phys., 16 (1983), 3825–3840 | DOI

[3] D. Cherns, S. J. Henley, F. A. Ponce, “Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence”, Appl. Phys. Letters, 78 (2001), 2691–2693 | DOI

[4] V. P. Voronov, A. M. Kosevich, “O lokalizovannom sostoyanii elektrona na kraevoi dislokatsii”, Fizika nizkikh temperatur, 6:3 (1980), 371–376

[5] R. A. Vardanyan, “The capture cross section for holes of a charged dislocation in a semiconductor”, ZhETF, 73:6 (1977), 2313

[6] R. A. Vardanyan, “Cross section for electron capture by a charged dislocation in a semiconductor”, ZhETF, 76:6 (1979), 2241

[7] A. A. Kteyan, A. S. Musayelyan, R. A. Vardanyan, “Auger recombination involving dislocations in semiconductors”, J. Phys. Condens. Matter, 15 (2003), 8445 | DOI

[8] L. B. Hovakimian, R. A. Vardanian, S. G. Veselko, “Inelastic scattering of neutrons by condensons on dislocations in semiconductors”, Solid State Commun., 74 (1990), 389 | DOI

[9] G. Rickayzen, “On the theory of the thermal capture of electrons in semi-conductors”, Proc. Roy. Soc. A, 241 (1957), 480 | DOI | MR

[10] R. A. Vardanyan, G. G. Kipakosyan, V. Ya. Kravchenko, “O zakhvate elektronov dislokatsiei v poluprovodnike”, FTT, 30:12 (1988), 3565

[11] J. T. Rebsch, “A combination of Auger and many-phonon processes in nonradiative recombination”, Solid State Commun., 31 (1979), 377 | DOI