Geodesic
Determination of the nonstationary radiation point defects distribution in crystal in the case of their annihilation on impurity atoms
Matematičeskoe modelirovanie, Tome 6 (1994) no. 3, pp. 25-35 
S. G. Denisenko; A. L. Aseev. Determination of the nonstationary radiation point defects distribution in crystal in the case of their annihilation on impurity atoms. Matematičeskoe modelirovanie, Tome 6 (1994) no. 3, pp. 25-35. http://geodesic.mathdoc.fr/item/MM_1994_6_3_a2/
@article{MM_1994_6_3_a2,
     author = {S. G. Denisenko and A. L. Aseev},
     title = {Determination of the nonstationary radiation point defects distribution in crystal in the case of their annihilation on impurity atoms},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {25--35},
     year = {1994},
     volume = {6},
     number = {3},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1994_6_3_a2/}
}
TY  - JOUR
AU  - S. G. Denisenko
AU  - A. L. Aseev
TI  - Determination of the nonstationary radiation point defects distribution in crystal in the case of their annihilation on impurity atoms
JO  - Matematičeskoe modelirovanie
PY  - 1994
SP  - 25
EP  - 35
VL  - 6
IS  - 3
UR  - http://geodesic.mathdoc.fr/item/MM_1994_6_3_a2/
LA  - ru
ID  - MM_1994_6_3_a2
ER  - 
%0 Journal Article
%A S. G. Denisenko
%A A. L. Aseev
%T Determination of the nonstationary radiation point defects distribution in crystal in the case of their annihilation on impurity atoms
%J Matematičeskoe modelirovanie
%D 1994
%P 25-35
%V 6
%N 3
%U http://geodesic.mathdoc.fr/item/MM_1994_6_3_a2/
%G ru
%F MM_1994_6_3_a2

Voir la notice de l'article provenant de la source Math-Net.Ru

The influence of annihilation sequence of vacancies $(\nu)$ and interstitial atoms $(i)$ on nonstationary distribution of impurity atoms has beeh analysed. The rate theory continuum model for sink strength of crystal surface for concentrations i and v has been used. The calculation of stiff nonlinear sets of the differential equations describing the kinetics of $i$ and $\nu$ concentrations during irradiation has been made. The comparison of i concentration profile calculated with the experimental data on irradiation of silicon crystal doped with impurity of carbon, oxygen, boron, and phosphorus has been carried out.