Geodesic
Determination of the nonstationary radiation point defects distribution in crystal in the case of their annihilation on impurity atoms
Matematičeskoe modelirovanie, Tome 6 (1994) no. 3, pp. 25-35.

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The influence of annihilation sequence of vacancies $(\nu)$ and interstitial atoms $(i)$ on nonstationary distribution of impurity atoms has beeh analysed. The rate theory continuum model for sink strength of crystal surface for concentrations i and v has been used. The calculation of stiff nonlinear sets of the differential equations describing the kinetics of $i$ and $\nu$ concentrations during irradiation has been made. The comparison of i concentration profile calculated with the experimental data on irradiation of silicon crystal doped with impurity of carbon, oxygen, boron, and phosphorus has been carried out. 
@article{MM_1994_6_3_a2,
     author = {S. G. Denisenko and A. L. Aseev},
     title = {Determination of the nonstationary radiation point defects distribution in crystal in the case of their annihilation on impurity atoms},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {25--35},
     publisher = {mathdoc},
     volume = {6},
     number = {3},
     year = {1994},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1994_6_3_a2/}
}
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S. G. Denisenko; A. L. Aseev. Determination of the nonstationary radiation point defects distribution in crystal in the case of their annihilation on impurity atoms. Matematičeskoe modelirovanie, Tome 6 (1994) no. 3, pp. 25-35. http://geodesic.mathdoc.fr/item/MM_1994_6_3_a2/