Voir la notice de l'article provenant de la source Math-Net.Ru
[1] Fertsiger Dzh., Kaper G., Matematicheskaya teoriya protsessov perenosa v gazakh, Mir, M., 1976
[2] Blotekjaer K., “Transport equations for electrons in two-valley semiconductors”, IEEE Trans Electron Devices, 17 (1970), 38–47 | DOI
[3] Martynov Y. B., Tager A. S., 19th Workshop on Compound Semiconductor Devices and Integrated Circuits. Stockholm, Sweden, May 21–24. 1995 (WOCSDICE'95)
[4] Zi S., Fizika poluprovodnikovykh priborov, v. 1, Mir, M., 1984
[5] Mock M. S., “A time-dependent numerical model of the insulated-gate field-effect transistor”, Solid-State Electron., 24:12 (1981), 959–966 | DOI
[6] Polskii B. C., Rimshans Ya. S., “Ob odnoi raznostnoi skheme resheniya nestatsionarnykh zadach teorii poluprovodnikovykh priborov”, Chisl. metody mekhan. sploshnoi sredy. Novosibirsk: ITG MSO AN SSSR, 16:14 (1985), 77–95
[7] Golant E. I., Martynov Ya. B., “Polnostyu konservativnaya, absolyutno ustoichivaya raznostnaya skhema dlya resheniya nestatsionarnykh zadach teorii poluprovodnikovykh priborov”, Elektronnaya tekhn. Ser. SVCh-tekhnika, 1992, no. 2(446), 59–63