Geodesic
The Asymptotic form of the solution of the Poisson equation in a model of a three-dimensional semiconductor structure
Žurnal vyčislitelʹnoj matematiki i matematičeskoj fiziki, Tome 32 (1992) no. 9, pp. 1509-1514 
L. V. Kalachev; I. A. Obukhov. The Asymptotic form of the solution of the Poisson equation in a model of a three-dimensional semiconductor structure. Žurnal vyčislitelʹnoj matematiki i matematičeskoj fiziki, Tome 32 (1992) no. 9, pp. 1509-1514. http://geodesic.mathdoc.fr/item/ZVMMF_1992_32_9_a14/
@article{ZVMMF_1992_32_9_a14,
     author = {L. V. Kalachev and I. A. Obukhov},
     title = {The {Asymptotic} form of the solution of the {Poisson} equation in a model of a three-dimensional semiconductor structure},
     journal = {\v{Z}urnal vy\v{c}islitelʹnoj matematiki i matemati\v{c}eskoj fiziki},
     pages = {1509--1514},
     year = {1992},
     volume = {32},
     number = {9},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/ZVMMF_1992_32_9_a14/}
}
TY  - JOUR
AU  - L. V. Kalachev
AU  - I. A. Obukhov
TI  - The Asymptotic form of the solution of the Poisson equation in a model of a three-dimensional semiconductor structure
JO  - Žurnal vyčislitelʹnoj matematiki i matematičeskoj fiziki
PY  - 1992
SP  - 1509
EP  - 1514
VL  - 32
IS  - 9
UR  - http://geodesic.mathdoc.fr/item/ZVMMF_1992_32_9_a14/
LA  - ru
ID  - ZVMMF_1992_32_9_a14
ER  - 
%0 Journal Article
%A L. V. Kalachev
%A I. A. Obukhov
%T The Asymptotic form of the solution of the Poisson equation in a model of a three-dimensional semiconductor structure
%J Žurnal vyčislitelʹnoj matematiki i matematičeskoj fiziki
%D 1992
%P 1509-1514
%V 32
%N 9
%U http://geodesic.mathdoc.fr/item/ZVMMF_1992_32_9_a14/
%G ru
%F ZVMMF_1992_32_9_a14

Voir la notice de l'article provenant de la source Math-Net.Ru

[1] Engl V. L., Dirks X. K., Mainertskhagen B., “Modelirovanie poluprovodnikovykh priborov”, Tr. In-ta inzh. po elektrotekhn. i radioelektronike, 71, no. 1, M., 1983, 14–42

[2] Marcowich P. A., Ringhofer C. A., “A singularly perturbed boundary value problem modelling a semiconductor device”, SIAM J. Appl. Math., 44:2 (1984), 231–256 | DOI | MR

[3] Boglaev I. P., O chislennom analize osnovnykh uravnenii, modeliruyuschikh rabotu poluprovodnikovykh struktur (odnomernoe priblizhenie), Preprint, In-t problem tekhnologii mikroelektroniki i osobochistykh materialov AN SSSR, Chernogolovka, 1986, 44 pp. | Zbl

[4] Belyanin M. P., “Ob asimptotike v odnomernykh modelyakh nekotorykh poluprovodnikovykh priborov”, Zh. vychisl. matem. i matem. fiz., 28:1 (1988), 34–51 | MR

[5] Marcowich P. A., The stationary semiconductor device equations, Springer, Vien, N. Y., 1986 | MR

[6] Kalachev L. V., Obukhov I. A., “Priblizhennoe reshenie uravneniya Puassona v modeli dvumernoi poluprovodnikovoi struktury”, Vestn. MGU. Ser. 3. Fiz., astron., 1989, no. 3, 63–68 | MR

[7] Kalachev L. V., Kryuchkov S. V., Obukhov I. A., “Asimptoticheskii analiz resheniya uravneniya Puassona v poluprovodnikakh”, Matem. modelirovanie, 1:9 (1989), 129–141 | MR

[8] Zi S., Fizika poluprovodnikovykh priborov, v. 1, 2, Mir, M., 1984

[9] Vasileva A. B., Butuzov V. F., Asimptoticheskie razlozheniya reshenii singulyarno vozmuschennykh uravnenii, Nauka, M., 1973 | MR

[10] Butuzov V. F., “Asimptotika resheniya uravneniya $\mu^2\Delta u-k^2(x, y)u=f(x, y)$ v pryamougolnoi oblasti”, Differents. ur-niya, 9:9 (1973), 1654–1660 | MR | Zbl

[11] Butuzov V. F., “Uglovoi pogransloi v singulyarno vozmuschennykh zadachakh s chastnymi proizvodnymi”, Differents. ur-niya, 15:10 (1979), 1848–1862 | MR | Zbl