Geodesic
Behavior of dielectric permittivity of piezomonocrystall near the resonant frequency
Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 3 (2014), pp. 62-65.

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The behavior of the quartz dielectric permittivity ($\varepsilon$) depending on the frequency of the applied alternating electric field is investigated. Peculiarities of quartz ($\varepsilon$) near the resonant frequency in the range from $1 \ kHz$ to $1 \ MHz$ and shows that the excitation of the piezoelectric crystal odd resonance frequency value of the real part of permittivity repeatedly ($\varepsilon^{\prime}$ ) increases, when the driving frequency of the crystal is close to the resonance frequency of the low frequency and a further increase in the frequency of the alternating electric field, the value of ($\varepsilon^{\prime}$ ) abruptly changes sign, becoming negative. The absolute value of ($\varepsilon^{\prime}$ ) increases by more than an order of magnitude. With further increase in the excitation frequency value of ($\varepsilon^{\prime}$ ) increases continuously and monotonically and tends to the value off resonance. Similar results were obtained for the odd high harmonics. The imaginary part of permittivity ($\varepsilon^{\prime\prime}$) negligible in the vicinity of the resonance frequencies of the odd. In the even of resonance frequencies of visible changes of ($\varepsilon$ ) is not observed.
Keywords: dielectric permittivity, resonant frequency, piezoelectric crystals, inductance.
Mots-clés : capacitance 
@article{UZERU_2014_3_a10,
     author = {V. G. Mirzoyan and A. A. Sahakyan and P. V. Mirzoyan},
     title = {Behavior of dielectric permittivity of piezomonocrystall near the resonant frequency},
     journal = {Proceedings of the Yerevan State University. Physical and mathematical sciences},
     pages = {62--65},
     publisher = {mathdoc},
     number = {3},
     year = {2014},
     language = {en},
     url = {http://geodesic.mathdoc.fr/item/UZERU_2014_3_a10/}
}
TY  - JOUR
AU  - V. G. Mirzoyan
AU  - A. A. Sahakyan
AU  - P. V. Mirzoyan
TI  - Behavior of dielectric permittivity of piezomonocrystall near the resonant frequency
JO  - Proceedings of the Yerevan State University. Physical and mathematical sciences
PY  - 2014
SP  - 62
EP  - 65
IS  - 3
PB  - mathdoc
UR  - http://geodesic.mathdoc.fr/item/UZERU_2014_3_a10/
LA  - en
ID  - UZERU_2014_3_a10
ER  - 
%0 Journal Article
%A V. G. Mirzoyan
%A A. A. Sahakyan
%A P. V. Mirzoyan
%T Behavior of dielectric permittivity of piezomonocrystall near the resonant frequency
%J Proceedings of the Yerevan State University. Physical and mathematical sciences
%D 2014
%P 62-65
%N 3
%I mathdoc
%U http://geodesic.mathdoc.fr/item/UZERU_2014_3_a10/
%G en
%F UZERU_2014_3_a10
V. G. Mirzoyan; A. A. Sahakyan; P. V. Mirzoyan. Behavior of dielectric permittivity of piezomonocrystall near the resonant frequency. Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 3 (2014), pp. 62-65. http://geodesic.mathdoc.fr/item/UZERU_2014_3_a10/

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