Geodesic
Influence of optical phonon confinement on two-phonon capture processes in quantum dots
Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 2 (2014), pp. 50-53.

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Electron capture process in $\mathrm{GaAs/AlAs}$ spherical quantum dot-quantum well structure is studied theoretically. The capture rate in two polar-optical-phononmediated capture processes has been calculated by taking into account the phonon confinement effect. Carrier capture is shown to proceed with rates as high as $10^{10} s^{–1}$at temperature $T>100~K$. A short capture time is also achieved for low carrier density
Keywords: capture process, two-phonon processes, confined optical phonons. 
@article{UZERU_2014_2_a6,
     author = {A. L. Vartanian and V. N. Mughnetsyan and K. A. Vardanyan and A. V. Dvurechenskii and A. A. Kirakosyan},
     title = {Influence of optical phonon confinement on two-phonon capture processes in quantum dots},
     journal = {Proceedings of the Yerevan State University. Physical and mathematical sciences},
     pages = {50--53},
     publisher = {mathdoc},
     number = {2},
     year = {2014},
     language = {en},
     url = {http://geodesic.mathdoc.fr/item/UZERU_2014_2_a6/}
}
TY  - JOUR
AU  - A. L. Vartanian
AU  - V. N. Mughnetsyan
AU  - K. A. Vardanyan
AU  - A. V. Dvurechenskii
AU  - A. A. Kirakosyan
TI  - Influence of optical phonon confinement on two-phonon capture processes in quantum dots
JO  - Proceedings of the Yerevan State University. Physical and mathematical sciences
PY  - 2014
SP  - 50
EP  - 53
IS  - 2
PB  - mathdoc
UR  - http://geodesic.mathdoc.fr/item/UZERU_2014_2_a6/
LA  - en
ID  - UZERU_2014_2_a6
ER  - 
%0 Journal Article
%A A. L. Vartanian
%A V. N. Mughnetsyan
%A K. A. Vardanyan
%A A. V. Dvurechenskii
%A A. A. Kirakosyan
%T Influence of optical phonon confinement on two-phonon capture processes in quantum dots
%J Proceedings of the Yerevan State University. Physical and mathematical sciences
%D 2014
%P 50-53
%N 2
%I mathdoc
%U http://geodesic.mathdoc.fr/item/UZERU_2014_2_a6/
%G en
%F UZERU_2014_2_a6
A. L. Vartanian; V. N. Mughnetsyan; K. A. Vardanyan; A. V. Dvurechenskii; A. A. Kirakosyan. Influence of optical phonon confinement on two-phonon capture processes in quantum dots. Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 2 (2014), pp. 50-53. http://geodesic.mathdoc.fr/item/UZERU_2014_2_a6/

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