Geodesic
Influence of optical phonon confinement on two-phonon capture processes in quantum dots
Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 2 (2014), pp. 50-53

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Electron capture process in $\mathrm{GaAs/AlAs}$ spherical quantum dot-quantum well structure is studied theoretically. The capture rate in two polar-optical-phononmediated capture processes has been calculated by taking into account the phonon confinement effect. Carrier capture is shown to proceed with rates as high as $10^{10} s^{–1}$at temperature $T>100~K$. A short capture time is also achieved for low carrier density
Keywords: capture process, two-phonon processes, confined optical phonons. 
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     author = {A. L. Vartanian and V. N. Mughnetsyan and K. A. Vardanyan and A. V. Dvurechenskii and A. A. Kirakosyan},
     title = {Influence of optical phonon confinement on two-phonon capture processes in quantum dots},
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A. L. Vartanian; V. N. Mughnetsyan; K. A. Vardanyan; A. V. Dvurechenskii; A. A. Kirakosyan. Influence of optical phonon confinement on two-phonon capture processes in quantum dots. Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 2 (2014), pp. 50-53. http://geodesic.mathdoc.fr/item/UZERU_2014_2_a6/