Geodesic
Thermal capture of electrons by dislocation kinks in semiconductors
Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 2 (2008), pp. 41-48

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In the light of recombination-enhanced motion of dislocations in semiconductors, we explored the process of thermal capture of an electron by a smooth kink on dislocation. Multi-phonon capture becomes possible due to carrier localisation on the kink. With the use of wave function of localized state we have found the multi-phonon capture cross-section for two limiting temperature cases corresponding to the thermally activated and quantum transition between vibronic terms. 
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     title = {Thermal capture of electrons by dislocation kinks in semiconductors},
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A. S. Vardanyan; R. A. Vardanyan. Thermal capture of electrons by dislocation kinks in semiconductors. Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 2 (2008), pp. 41-48. http://geodesic.mathdoc.fr/item/UZERU_2008_2_a6/