Geodesic
Formation of one-dimensional electron channel near the abrupt interface of two quantum-size films with different thickness
Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 3 (2003), pp. 57-64.

Voir la notice de l'article provenant de la source Math-Net.Ru

The confinement potential and charge distribution in the abrupt contact of two two-dimensional systems is considered theoretically. It is shown that a quasi-one dimensional electron channel can be formed near the interface between two quantum-size semiconductor films with different thickness and doping levels. Using the structure with double such "dimensional" heterojunctions a rectangular potential well confining one-dimensional electrons (quantum wire) can be realized.
Keywords: Two quantum-size semiconductor films, rectangular potential well.
Mots-clés : heterojunction 
@article{UZERU_2003_3_a8,
     author = {A. E. Esayan},
     title = {Formation of one-dimensional electron channel near the abrupt interface of two quantum-size films with different thickness},
     journal = {Proceedings of the Yerevan State University. Physical and mathematical sciences},
     pages = {57--64},
     publisher = {mathdoc},
     number = {3},
     year = {2003},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/UZERU_2003_3_a8/}
}
TY  - JOUR
AU  - A. E. Esayan
TI  - Formation of one-dimensional electron channel near the abrupt interface of two quantum-size films with different thickness
JO  - Proceedings of the Yerevan State University. Physical and mathematical sciences
PY  - 2003
SP  - 57
EP  - 64
IS  - 3
PB  - mathdoc
UR  - http://geodesic.mathdoc.fr/item/UZERU_2003_3_a8/
LA  - ru
ID  - UZERU_2003_3_a8
ER  - 
%0 Journal Article
%A A. E. Esayan
%T Formation of one-dimensional electron channel near the abrupt interface of two quantum-size films with different thickness
%J Proceedings of the Yerevan State University. Physical and mathematical sciences
%D 2003
%P 57-64
%N 3
%I mathdoc
%U http://geodesic.mathdoc.fr/item/UZERU_2003_3_a8/
%G ru
%F UZERU_2003_3_a8
A. E. Esayan. Formation of one-dimensional electron channel near the abrupt interface of two quantum-size films with different thickness. Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 3 (2003), pp. 57-64. http://geodesic.mathdoc.fr/item/UZERU_2003_3_a8/

[1] G. Bastard, Wave mechanics applied to semiconductor heterostructure, Les Editions de physique, Les Ulis Cedex, 1992

[2] V. Mitin, V. Kochelap, M. Strascio, Quantum Heterostructures, Cambridge Univ. Press., UK, 1999

[3] T. Ando, J. Phys. Soc. of Japan, 51:12 (1982), 3900 | DOI | MR

[4] Yu. K. Pozhela, Fizika bystrodeistvuyuschikh tranzistorov, Mokslas, Vilnyus, 1989

[5] S. G. Petrosyan, A. Ya. Shik, ZhETF, 2 (1989), 2229

[6] W. C. B. Peatman, T. W. Crowe, M. Shur, IEEE Electron Device Lett., 13 (1992), 11 | DOI

[7] D. Ruter, C. Meier, C. Riedesel, A. D. Wieck, Semicond. Sci. Technol., 17 (2002), 585 | DOI

[8] I. S. Gradshtein, I. M. Ryzhik, Tablitsa integralov, summ, ryadov i proizvedenii, Fizmatgiz, M., 1962 | MR

[9] D. Kaufman, Y. Berk, V. Dwir, A. Rudra, A. Palevski, E. Kapon, Phys. Rev. V, 59 (1999), RI0433