Geodesic
Excitons in semiconductors with narrow forbidden zone
Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 1 (1989), pp. 144-147 
Yu. V. Karakashian. Excitons in semiconductors with narrow forbidden zone. Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 1 (1989), pp. 144-147. http://geodesic.mathdoc.fr/item/UZERU_1989_1_a12/
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     title = {Excitons in semiconductors with narrow forbidden zone},
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Voir la notice de l'article provenant de la source Math-Net.Ru

The energetic spectrum of the exciton formed by electron and hole, submitting to Kane dispersion law has been investigated in the semiconductors with narrow forbidden zone. The wave function of the exciton state has been calculated. The obtained results have been compared with the energetic spectrum of the exciton submitting to the standard parabolic dispersion law and the splitting of the energetic levels has been estimated.

[1] I. M. Tsidilkovskii, Zonnaya struktura poluprovodnikov, Nauka, M., 1978

[2] E. O. Kane, Semiconductors and Semimetals, Chapter 3, v. 27, eds. R. K. Millardson and A. C. Beer, Academic Press, New York, London, 1966, 423 pp.

[3] Spravochnik po spetsialnym funktsiyam, eds. Abramovits M., Stigan I. M., Nauka, M., 1979, 264–270 | MR

[4] L. D. Landau, E. M. Lifshits, Kvantovaya mekhanika, Nauka, M., 1974, 105 | MR