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[1] O. N. Ermakov, V. P. Sushkov, “Izluchatelnaya rekombinatsiya s uchastiem glubokikh tsentrov v tverdykh rastvorakh In$_{1-s}$Ga$_x$P”, FTP, 16:3 (1982), 461–466
[2] E. V. Tulashvili, L. S. Vavilov, D. Z. Garbuzov, I. N. Arsenev, V. B. Khalfin, “Vliyanie rekombinatsii na fotolyuminestsentnye kharakteristiki dvoinykh geterostruktur In$_0.5$Ga$_0.5$P–InGaAsP”, FTP, 16:9 (1982), 1615–1619
[3] J. S. Roberts, O. V. Scott, J. R. Gowers, “Structural and photoinminescent properties of In$_{1+x}$Ga$_x$P”, Journ. Appl. Phys., 52:6 (1981), 4018–4026 | DOI
[4] S. Sugai, J. H. Harris, A. V. Nurmikko, “Strong electron-phonon interaction effects in modulated transient reflectance spectra of In$_0.5$Ga$_0.5$P”, St. Commun., 43:12 (1982), 913–916 | DOI
[5] G. M. Avakyants, A. I. Vaganyan, M. L. Dimaksyan, “O mekhanizmakh rasseyaniya zlektronov v tverdykh rastvorakh In$_{1-x}$Ga$_x$P”, Izv. AN SSR, Fizika, 13:2 (1978), 118–126
[6] A. I. Vaganyan, M. L. Dimaksyan, “Izmenenie podvizhnosti elektronov v tverdykh rastvorakh In$_{1-x}$Ga$_x$P v zavisimosti ot sostava”, Sb. yubil. nauchnykh sessii (k 60-letiyu EGU), Erevan, 1981, 148—158
[7] A. I. Vaganyan, M. L. Dimaksyan, “Teploprovodnost sistemy In$_{1-x}$Ga$_x$P”, Izv. AN SSR, Fizika, 12:2 (1980), 131–137I
[8] A. I. Vaganyan, “O termo-eds mnogodolinnykh poluprovodnikov”, Izv. AN Arm. SSR, Fizika, 20:6 (1985)