Geodesic
Application of X-ray pendulum fringes for investigation of electron irradiated semiconductors
Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 2 (1985), pp. 80-83.

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In the present work, a two-block X-ray interferometer (wedge-thick crystal) was used to study distorted regions of the crystal structure formed in a wedge-shaped plate as a result of its irradiation with electrons with energies of 0.5–1.0 MeV. Based on the detected mixtures of the absolute positions of the pendulum bands, the sizes of strongly distorted regions of the crystal under study were estimated. 
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K. V. Aloumyan; R. I. Baghdasarian; F. H. Eyramjyan. Application of X-ray pendulum fringes for investigation of electron irradiated semiconductors. Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 2 (1985), pp. 80-83. http://geodesic.mathdoc.fr/item/UZERU_1985_2_a13/

[1] B. C. Vavilov, Deistvie izluchenii na poluprovodniki, Fizmatgiz, M., 1963

[2] I. D. Konozenko, A. K. Semenyuk, V. I. Khivrich, Radiatsionnye defekty v kremnii, Naukova dumka, Kiev, 1974

[3] G. D. Watkins, J. W. Corbett, “Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy”, Phys. Rev., 3:2A (1965), A543 | DOI

[4] P. V. Zhukovskii, V. F. Stelmakh, V. D. Tkachev, “Amorfizatsiya poluprovodnikovykh materialov kak protsess dostizheniya predelnoi kontsentratsii tochechnykh defektov”, Fizika i tekhnika poluprovodnikov, 10:II (1976), 2223

[5] K. V. Alumyan, R. I. Bagdasaryan, M. K. Balyan, F. O. Eiramdzhyan, “Vliyanie kristallicheskikh iskazhenii na obrazovanie i vid mayatnikovykh polos. I”, Kristallografiya, 28:5 (1983), 1024–1025

[6] L. S. Milevskii, V. S. Garnyk, “Ispolzovanie lokalnogo oblucheniya dlya izucheniya radiatsionnykh svoistv poluprovodnikov”, Fizika i tekhnika poluprovodnikov, 13:7 (1979), 1369

[7] M. Hart, “Pendellosung Fringes in Elastically Deformed Silicon”, J. Zeitschrift fur physik, 189 (1966), 269 | DOI