Mathematical modeling of formation of doping nanostructures in basic material (nanotechnologies for microelectronics)

G. A. Tarnavskii ; A. V. Aliev ; A. G. Tarnavskii

Sibirskij žurnal vyčislitelʹnoj matematiki, Tome 10 (2007) no. 4, pp. 401-416

Résumé

Physical-chemical processes, which constitute the basis of one of segments of a technological cycle for designing new semiconductor materials for nanoelectronics, were numerically simulated. This production stage – the burning of basic material (Si, Ti or Ge) in oxygen – is intended for the formation of special nanostructures of donor (P, As or Sb) and acceptor (B, Ga or Al) dopings regularly distributed in the basic material before starting the burning. In this paper, investigation of the growth of dynamics of an oxide film and the study of redistribution of dopings by physical-chemical processes of segregation on “oxide/material” wave front is carried out for some version of employed configurations of the base surface (“trench”) partly closed by protecting masks, which preserve some segments of the surface from oxidation. The distributions of doping concentration, with generation of different domains, including specific nanostructures – short-located zones (60–80 nm) of elevated concentrations of the donor and the acceptor dopings, are obtained and analyzed. These nanostructures of the donor and the acceptor dopings in the base provide the required semiconductor electrophysical properties of material.