Influence of aluminum doping degree on the properties of titanium-aluminum oxide films

H. T. Doan ; D. A. Golosov ; J. Zhang ; N. A. Kananovich ; S. M. Zavadski ; S. N. Melnikov

Problemy fiziki, matematiki i tehniki, no. 2 (2023), pp. 74-82.

Résumé

The characteristics of titanium-aluminum oxide films deposited by reactive magnetron sputtering of Ti-Al compound targets have been studied. The dependences of the permittivity, dielectric loss tangent, band gap, leakage current density, and breakdown field strength on the degree of film doping with aluminum $C_{\mathrm{Al}}$ and the oxygen concentration in the Ar / O$_2$ gas mixture during the deposition of $\Gamma_{\mathrm{O}2}$ are obtained. It has been established that an increase in $C_{\mathrm{Al}}$ leads to a decrease in dielectric losses and leakage current, an increase in the band gap and the strength of the breakdown field of the films. However, in this case, the dielectric constant of the films decreases to values less than $10$.

Détail

Keywords: reactive magnetron sputtering, composite target, thin films, titanium-aluminum oxide, dielectric permittivity, leakage current, band gap.
Mots-clés : elemental composition, dielectric loss tangent

Bibliographie

[1] K.H. Jing et al., “Gate dielectric scaling in MOSFETs device”, AIP Conference Proceedings, 1733 (2016), 020073 | DOI

[2] S. Hall et al., “Review and perspective of high-k dielectrics on silicon”, J. of Telecomunications and Information Technology, 2 (2007), 33–43

[3] J. Robertson, R.M. Wallace, “High-K materials and metal gates for CMOS applications”, Materials Science and Engineering R, 88 (2015), 1–41 | DOI

[4] R.M. Wallace, G. Wilk, “High-k gate dielectric materials”, MRS Bull., 27:3 (2002), 192–197 | DOI

[5] K. Frohlich et al., “Growth of high-dielectric-constant TiO$_2$ films in capacitors with RuO$_2$ electrodes”, Electrochem. Solid-State Lett., 11:6 (2008), G19–G21 | DOI

[6] Y.S. Kim, S.J. Yun, “Nanolaminated Al$_2$O$_3$ - TiO$_2$ thin films grown by atomic layer deposition”, J. Cryst. Growth., 274:3–4 (2005), 585–593 | DOI

[7] Y.-M. Sung, H.-J. Kim, “Sputter deposition and surface treatment of TiO$_2$ films for dye-sensitized solar cells using reactive RF plasma”, Thin Solid Films, 515:12 (2007), 4996–4999 | DOI

[8] H. Tang et al., “Surface morphology of $\alpha$-SiC coatings deposited by RF magnetron sputtering”, Surface Coatings Technology, 197:2–3 (2005), 161–167 | DOI

[9] J.W. Lim, S.J. Yun, H.-T. Kim, “Characteristics of Al$_x$Ti$_{1-x}$O$_y$ films grown by plasma-enhanced atomic layer deposition”, J. Electrochem. Soc., 154:11 (2007), G239–G243 | DOI

[10] A.P. Alekhin i dr., “Strukturno-khimicheskie i elektrofizicheskie svoistva tonkikh plenok Ti$_{0.3}$Al$_{0.7}$O$_y$ poluchennykh metodom atomno-sloevogo osazhdeniya”, Trudy MFTI, 4:3 (2012), 64–73 | Zbl

[11] J. Peng et al., “High-k titanium-aluminum oxide dielectric films prepared by inorganic-organic hybrid solution”, J. Sol-Gel Sci. Technol., 71:3 (2014), 458–463 | DOI

[12] C. Avis, J. Jang, “High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol-gel method”, J. Mater. Chem., 21 (2011), 10649–10652 | DOI

[13] D.A. Golosov, S.N. Melnikov, A.P. Dostanko, “Raschet elementnogo sostava tonkoplenochnykh sloev pri magnetronnom raspylenii mozaichnykh mishenei”, Elektronnaya obrabotka materialov, 48:1 (2012), 63–72

[14] J. Nakano et al., “Thermal conductivity of yttria-stabilized zirconia thin films prepared by magnetron sputtering”, J. Ceram. Soc. of Jap., 112 (2004), S908–S911

[15] K. Seshan, D. Schepis (eds.), Handbook of Thin Film Deposition, Elsevier Inc., 2018, 195–230

[16] N. Laegreid, G.K. Wehner, “Sputtering yields of metals for Ar$^+$ and Ne$^+$ ions with energies from 50 to 600 eV”, J. Appl. Phys., 32 (1961), 365–369 | DOI

[17] M.J. Goeckner, J.A. Goree, T.E. Sheridan, “Monte Carlo simulation of ions in a magnetron plasma”, IEEE Trans. Plasma. Sci., 19:2 (1991), 301–308 | DOI

[18] Kh.T. Doan i dr., “Vliyanie sposoba podachi rabochikh gazov vkameru na protsessy reaktivnogo magnetronnogo raspyleniya Ti-Al sostavnoi misheni”, ZhTF, 93:3 (2023), 409–416

[19] Kh.T. Doan i dr., “Primenenie opticheskoi emissionnoi spektroskopii dlya prognozirovaniya sostava plenok pri reaktivnom magnetronnom raspylenii Ti-Al sostavnykh mishenei”, Elektronnaya obrabotka materialov, 59:1 (2023), 60–69