Influence of aluminum doping degree on the properties of titanium-aluminum oxide films

H. T. Doan ; D. A. Golosov ; J. Zhang ; N. A. Kananovich ; S. M. Zavadski ; S. N. Melnikov

Problemy fiziki, matematiki i tehniki, no. 2 (2023), pp. 74-82

Résumé

The characteristics of titanium-aluminum oxide films deposited by reactive magnetron sputtering of Ti-Al compound targets have been studied. The dependences of the permittivity, dielectric loss tangent, band gap, leakage current density, and breakdown field strength on the degree of film doping with aluminum $C_{\mathrm{Al}}$ and the oxygen concentration in the Ar / O$_2$ gas mixture during the deposition of $\Gamma_{\mathrm{O}2}$ are obtained. It has been established that an increase in $C_{\mathrm{Al}}$ leads to a decrease in dielectric losses and leakage current, an increase in the band gap and the strength of the breakdown field of the films. However, in this case, the dielectric constant of the films decreases to values less than $10$.

Détail

Keywords: reactive magnetron sputtering, composite target, thin films, titanium-aluminum oxide, dielectric permittivity, leakage current, band gap.
Mots-clés : elemental composition, dielectric loss tangent