Geodesic
Influence of heat treatment temperature on the structure of thin sоl-gel samarium-doped BiFeO$_3$ films
Problemy fiziki, matematiki i tehniki, no. 4 (2020), pp. 71-74 Cet article a éte moissonné depuis la source Math-Net.Ru

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The effect of the treatment temperature on the structural properties of sol-gel films of samarium-doped BiFeO$_3$ was established. Optimal compositions of BiFeO$_3$:Sm films and their heat treatment modes have been determined. The effect of samarium (Sm) doping on the crystal structure and topography of the surface of thin films BiFeO$_3$ (BFO) and BiFeO$_3$:Sm (BFO:Sm) was investigated. X-ray diffraction (XRD) results for BFO and BFO: Sm films calcined at 600$^\circ$ C revealed the single-phase state of BFO films (Sm:BFO) with the rhombohedral crystal lattice (space group R3c). The presence of samarium was confirmed by EDS. The small distortion of the crystal lattice is explained by the smaller ionic radius of the samarium ion replacing the europium ion.
Keywords: sol-gel method, topography, crystal structure, films, bismuth ferrite.
Mots-clés : X-ray diffraction 
@article{PFMT_2020_4_a11,
     author = {S. A. Khakhomov and A. V. Semchenko and V. V. Sidsky and O. I. Tyulenkova and A. N. Morozovska},
     title = {Influence of heat treatment temperature on the structure of thin s{\cyro}l-gel samarium-doped {BiFeO}$_3$ films},
     journal = {Problemy fiziki, matematiki i tehniki},
     pages = {71--74},
     year = {2020},
     number = {4},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/PFMT_2020_4_a11/}
}
TY  - JOUR
AU  - S. A. Khakhomov
AU  - A. V. Semchenko
AU  - V. V. Sidsky
AU  - O. I. Tyulenkova
AU  - A. N. Morozovska
TI  - Influence of heat treatment temperature on the structure of thin sоl-gel samarium-doped BiFeO$_3$ films
JO  - Problemy fiziki, matematiki i tehniki
PY  - 2020
SP  - 71
EP  - 74
IS  - 4
UR  - http://geodesic.mathdoc.fr/item/PFMT_2020_4_a11/
LA  - ru
ID  - PFMT_2020_4_a11
ER  - 
%0 Journal Article
%A S. A. Khakhomov
%A A. V. Semchenko
%A V. V. Sidsky
%A O. I. Tyulenkova
%A A. N. Morozovska
%T Influence of heat treatment temperature on the structure of thin sоl-gel samarium-doped BiFeO$_3$ films
%J Problemy fiziki, matematiki i tehniki
%D 2020
%P 71-74
%N 4
%U http://geodesic.mathdoc.fr/item/PFMT_2020_4_a11/
%G ru
%F PFMT_2020_4_a11
S. A. Khakhomov; A. V. Semchenko; V. V. Sidsky; O. I. Tyulenkova; A. N. Morozovska. Influence of heat treatment temperature on the structure of thin sоl-gel samarium-doped BiFeO$_3$ films. Problemy fiziki, matematiki i tehniki, no. 4 (2020), pp. 71-74. http://geodesic.mathdoc.fr/item/PFMT_2020_4_a11/

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