Geodesic
Investigation of the process of laser splitting of two-layer structures of silicon plates and glass substrates
Problemy fiziki, matematiki i tehniki, no. 3 (2020), pp. 44-49.

Voir la notice de l'article provenant de la source Math-Net.Ru

In this work, a numerical simulation of the process of laser splitting of two-layer structures made of monocrystalline silicon and glass is carried out when the workpiece is exposed to laser beams with wavelengths equal to 1.06 $\mu$m and 10.6 $\mu$m and a refrigerant. The calculation of thermoelastic fields formed in a two-layer plate as a result of laser heating was carried out for three sections of silicon crystals: (100), (110), (111). The analysis of the results obtained was carried out both for the case of processing from the side of the glass layer, and for the case of processing from the side of monocrystalline silicon. The results obtained in this work can be used to optimize the process of precision separation of two-layer structures made of monocrystalline silicon and glass.
Keywords: crack, laser splitting, silicon plate. 
@article{PFMT_2020_3_a6,
     author = {Yu. V. Nikitjuk},
     title = {Investigation of the process of laser splitting of two-layer structures of silicon plates and glass substrates},
     journal = {Problemy fiziki, matematiki i tehniki},
     pages = {44--49},
     publisher = {mathdoc},
     number = {3},
     year = {2020},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/PFMT_2020_3_a6/}
}
TY  - JOUR
AU  - Yu. V. Nikitjuk
TI  - Investigation of the process of laser splitting of two-layer structures of silicon plates and glass substrates
JO  - Problemy fiziki, matematiki i tehniki
PY  - 2020
SP  - 44
EP  - 49
IS  - 3
PB  - mathdoc
UR  - http://geodesic.mathdoc.fr/item/PFMT_2020_3_a6/
LA  - ru
ID  - PFMT_2020_3_a6
ER  - 
%0 Journal Article
%A Yu. V. Nikitjuk
%T Investigation of the process of laser splitting of two-layer structures of silicon plates and glass substrates
%J Problemy fiziki, matematiki i tehniki
%D 2020
%P 44-49
%N 3
%I mathdoc
%U http://geodesic.mathdoc.fr/item/PFMT_2020_3_a6/
%G ru
%F PFMT_2020_3_a6
Yu. V. Nikitjuk. Investigation of the process of laser splitting of two-layer structures of silicon plates and glass substrates. Problemy fiziki, matematiki i tehniki, no. 3 (2020), pp. 44-49. http://geodesic.mathdoc.fr/item/PFMT_2020_3_a6/

[1] Y.C. Cai et al., “Laser cutting silicon-glass double layer wafer with laser induced thermal-crack propagation”, Opt. Laser. Eng., 82 (2019), 173–185 | DOI

[2] V.S. Kondratenko, A.S. Naumov, Sposob rezki nemetallicheskikh materialov, zayavitel V. S. Kondratenko, pat. 2404931 RF, MKI 5 C03B33/09, zayavl. 28.08.2009, opubl. 27.11.2010

[3] V.S. Kondratenko, Sposob rezki nemetallicheskikh materialov, zayavitel V. S. Kondratenko, pat. 2024441 RF, MKI 5 C03B33/02, zayavl. 04.02.92, opubl. 12.15.1994

[4] A.N. Serdyukov, S.V. Shalupaev, Yu.V. Nikityuk, “Osobennosti upravlyaemogo lazernogo termoraskalyvaniya kristallicheskogo kremniya”, Kristallografiya, 55:6 (2010), 1180–1184

[5] A.M. Saman et al., “A study on separating of a silicon wafer with moving laser beam by using thermal stress cleaving technique”, J. Mater. Process. Tech., 223 (2015), 252–261 | DOI

[6] V.K. Sysoev i dr., “Kontseptsiya dvukhlazernogo termoraskalyvaniya steklyannykh elementov dlya kosmicheskikh apparatov”, Vestnik «FGUP NPO im. S.A. Lavochkina», 2011, no. 1, 38–44

[7] Jian Liu et al., “Numerical study on thermal stress cutting of silicon wafer using two-point pulsed laser”, Optica Applicata, XLI:1 (2011), 247–255

[8] J. Junke, W. Xinbing, “Cutting glass substrates with duallaser beams”, Optics and Lasers in Engineering, 47 (2009), 860–864 | DOI

[9] S.V. Shalupaev i dr., “Dvuluchevoe lazernoe termoraskalyvanie khrupkikh nemetallicheskikh materialov”, Opticheskii zhurnal, 73:5 (2005), 62–66 | Zbl

[10] S.V. Shalupaev i dr., “Lazernaya rezka keramicheskikh materialov s metallizirovannoi poverkhnostyu”, Opticheskii zhurnal, 68:10 (2001), 41–44

[11] L.S. Sinev, “Otsenka mekhanicheskikh napryazhenii v soedinennykh pri povyshennoi temperature kremnii i stekle”, Nauka i Obrazovanie MGTU im. N.E. Baumana. Elektron. Zhurn., 2014, no. 12, 946–960

[12] N.N. Shabrov, Metod konechnykh elementov v raschetakh detalei teplovykh dvigatelei, Mashinostroenie, L., 1983, 212 pp.

[13] G.P. Karzov, B.Z. Margolin, V.A. Shevtsova, Fiziko-mekhanicheskoe modelirovanie protsessov razrusheniya, Politekhnika, SPb., 1993, 391 pp.

[14] Yu.V. Koritskii i dr., Spravochnik po elektrotekhnicheskim materialam, Energoatomizdat, L., 1988, 728 pp.

[15] Yu.A. Kontsevoi, Yu.M. Litvinov, E.A. Fattakhov, Plastichnost i prochnost poluprovodnikovykh materialov i struktur, Radio i svyaz, M., 1982, 240 pp.

[16] T. Lackner, “Determination of axisymmetric elastic constants in anisotropic silicon for a thyristor tablet”, Journal of electronic materials, 18 (1989), 19–24 | DOI

[17] A.A. Blistanov i dr., Akusticheskie kristally, ed. M.P. Shaskolskii, Nauka, M., 1982, 632 pp.

[18] E.S. Falkevich i dr., Tekhnologiya poluprovodnikovogo kremniya, Metallurgiya, M., 1992, 408 pp.

[19] GOST 13659-68. Steklo opticheskoe bestsvetnoe. Fiziko-khimicheskie svoistva. Parametry, M., 1968