Geodesic
Formation of tantalum oxide films on substrates with a diameter of 200 mm
Problemy fiziki, matematiki i tehniki, no. 1 (2020), pp. 12-17.

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As a result of studies of the processes of reactive magnetron sputtering of a Ta target in an Ar/O$_2$ working gas mixture, it is found that the formation of dielectric films is observed at the concentration of O$_2$ higher than 50% and it is determined by the enthalpy of oxide formation from the source metal. The use of high-vacuum sputtering allows stabilizing the process without the use of feedback systems. It is shown that when depositing tantalum oxide films on a $\varnothing$ 200 mm rotating substrate, it is possible to obtain layers with a thickness non-uniformity of less than $\pm$2.4%, a capacitance and dielectric loss tangent nonuniformity of less than $\pm$18%.
Keywords: tantalum oxide, thin films, reactive magnetron sputtering, MOS structure, dielectric properties. 
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     title = {Formation of tantalum oxide films on substrates with a diameter of 200 mm},
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N. Villa; D. A. Golosov; S. N. Melnikov; T. D. Nguyen; A. D. Golosov; E. E. Litvin; N. N. Lam. Formation of tantalum oxide films on substrates with a diameter of 200 mm. Problemy fiziki, matematiki i tehniki, no. 1 (2020), pp. 12-17. http://geodesic.mathdoc.fr/item/PFMT_2020_1_a1/

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