Dielectric properties of tantalum oxide thin films deposited by reactive magnetron sputtering

N. Villa ; D. A. Golosov ; T. D. Nguyen

Problemy fiziki, matematiki i tehniki, no. 2 (2019), pp. 15-20.

Résumé

The article presents the results of studies of the dielectric characteristics of tantalum oxide films deposited by reactive magnetron sputtering of a Ta target in an Ar/O$_2$ gas mixture. Dependencies of dielectric constant, dielectric loss tangent, band gap, leakage current density on oxygen content in Ar/O$_2$ gas mixture during film deposition were established. Films with a dielectric constant of $12$–$30$ units, a dielectric loss tangent of $0.01$, a leakage current density of less than $0.1$ A/cm$^2$ at an electric field strength of $2.0\cdot 10^6$ V/cm, and band gap of $4.5$–$4.85$ eV, were obtained.

Détail

Keywords: tantalum oxide, reactive magnetron sputtering, MOS structure, dielectric properties.

Bibliographie

[1] E.V. Berlin, L.A. Seidman, Poluchenie tonkikh plenok reaktivnym magnetronnym raspyleniem, Tekhnosfera, M., 2014, 255 pp.

[2] C. Chaneliere et al., “Tantalum pentoxide (Ta$_2$O$_5$) thin films for advanced dielectric applications”, Materials Science and Engineering: R: Reports, 22:6 (1998), 269–322 | DOI

[3] N. Donkov et al., “Tantalum pentoxide ceramic coatings deposition on Ti4Al6V substrates for biomedical applications”, Problems At. Sci. Technol., 2011, 131–133

[4] A.E. Komlev i dr., “Vliyanie implantatov s otritsatelnym elektretnym pokrytiem Ta$_2$O$_5$ na protsessy reparativnogo tendogeneza v eksperimente i pervyi opyt ikh klinicheskogo primenenii”, Voenno-meditsinskii zhurnal, 330:4 (2009), 70–72

[5] S. Hall et al., “Review and perspective of high-k dielectrics on silicon”, J. of Telecomunications and Information Technology, 2 (2007), 33–43

[6] R. Hollerweger, “Magnetic field strength influence on the reactive magnetron sputter deposition of Ta$_2$O$_5$”, J. Phys. D: Appl. Phys., 46 (2013), 1–7 | DOI

[7] S.V. Jagadeesh Chandra, “Effect of substrate temperature on the structural, optical and electrical properties of dc magnetron sputtered tantalum oxide films”, Applied Surface Science, 254:7 (2008), 1953–1960 | DOI

[8] T. Riekkinen, J. Molarius, “Reactively sputtered tantalum pentoxide thin films for integrated capacitors”, Microelectronic Engineering, 70:2–4 (2003), 392–397 | DOI

[9] E. Franke et al., “Optical properties of amorphous and polycrystalline tantalum oxide thin films measured by spectroscopic ellipsometry from 0.03 to 8.5 eV”, Thin Solid Films, 388:1–2 (2001), 283–289 | DOI

[10] Ch. Guoping et al., “Structures and properties of a Ta$_2$O$_5$ thin film deposited by dc magnetron reactive sputtering in a pure O$_2$ atmosphere”, Vacuum, 41:4–6 (1990), 1204–1206 | DOI

[11] H. Ono et al., “Ta-O phonon peaks in tantalum oxide films on Si”, Thin Solid Films, 381:1 (2001), 57–61 | DOI

[12] A.A. Barybin i dr., “Chastotnaya dispersiya plenok oksida tantala”, Pisma ZhTF, 32:2 (2006), 61–66

[13] K. Kukli et al., “Properties of tantalum oxide thin films grown by atomic layer deposition”, Thin Solid Films, 260 (1995), 135–142 | DOI

[14] O.D. Volpyan i dr., “Opticheskie svoistva plenok Ta$_2$O$_5$ v korotkovolnovoi oblasti spektra”, Prikladnaya fizika, 4 (2012), 47–53

[15] A.P. Dostanko i dr., “Elektricheskie i opticheskie svoistva plenok oksida tsinka, nanesennykh metodom ionno-luchevogo raspyleniya oksidnoi misheni”, FTP, 48:9 (2014), 1274–1279

[16] P.A. Murawala et al., “Structural and Electrical Properties of Ta$_2$O$_5$ Grown by the Plasma-Enhanced Liquid Source CVD Using Penta Ethoxy Tantalum Source”, Japanese Journal of Applied Physics, 32 (1993), 368–375 | DOI

[17] R. Ramprasad, “First principles study of oxygen vacancy defects in tantalum pentoxide”, Journal of Applied Physics, 94 (2003), 5609–5612 | DOI

[18] H. Sawada, K. Kawakami, “Electronic structure of oxygen vacancy in Ta$_2$O$_5$”, Journal of Applied Physics, 86 (1999), 956–1001 | DOI

[19] R. Nashed, “Unravelling the interplay of crystal structure and electronic band structure of tantalum oxide (Ta$_2$O$_5$)”, Physical Chemistry Chemical Physics, 15 (2013), 1352–1357 | DOI

[20] W.H. Knausenberger, R.N. Tauber, “Selected Properties of Pyrolytic Ta$_2$O$_5$ Films”, J. Electrochem. Soc., 120 (1973), 927–931 | DOI

[21] A.G. Revesz et al., “Optical Properties of Tantalum Oxide Films on Silicon”, J. Electrochem. Soc., 123 (1976), 889–894 | DOI

[22] D.A. Golosov i dr., “Dielektricheskie kharakteristiki plenok oksida gafniya”, Rossiiskie nanotekhnologii, 12:9–10 (2017), 63–68 | Zbl

[23] D.B. Zolotukhin i dr., “Reaktivnye metody osazhdeniya plenok oksidov titana (obzor)”, Uspekhi prikladnoi fiziki, 5:5 (2017), 442–452

[24] N. Vilya i dr., “Formirovanie plenok oksida tsirkoniya metodom reaktivnogo magnetronnogo raspyleniya”, Materialy 12-i mezhdunarodnoi konferentsii «Vzaimodeistvie izluchenii s tverdym telom» (Minsk, Belarus, 19–22 sentyabrya 2017 g.), 438–440