Geodesic
Dielectric properties of tantalum oxide thin films deposited by reactive magnetron sputtering
Problemy fiziki, matematiki i tehniki, no. 2 (2019), pp. 15-20

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The article presents the results of studies of the dielectric characteristics of tantalum oxide films deposited by reactive magnetron sputtering of a Ta target in an Ar/O$_2$ gas mixture. Dependencies of dielectric constant, dielectric loss tangent, band gap, leakage current density on oxygen content in Ar/O$_2$ gas mixture during film deposition were established. Films with a dielectric constant of $12$–$30$ units, a dielectric loss tangent of $0.01$, a leakage current density of less than $0.1$ A/cm$^2$ at an electric field strength of $2.0\cdot 10^6$ V/cm, and band gap of $4.5$–$4.85$ eV, were obtained.
Keywords: tantalum oxide, reactive magnetron sputtering, MOS structure, dielectric properties. 
@article{PFMT_2019_2_a1,
     author = {N. Villa and D. A. Golosov and T. D. Nguyen},
     title = {Dielectric properties of tantalum oxide thin films deposited by reactive magnetron sputtering},
     journal = {Problemy fiziki, matematiki i tehniki},
     pages = {15--20},
     publisher = {mathdoc},
     number = {2},
     year = {2019},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/PFMT_2019_2_a1/}
}
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N. Villa; D. A. Golosov; T. D. Nguyen. Dielectric properties of tantalum oxide thin films deposited by reactive magnetron sputtering. Problemy fiziki, matematiki i tehniki, no. 2 (2019), pp. 15-20. http://geodesic.mathdoc.fr/item/PFMT_2019_2_a1/