Effect of heat treatment conditions on the structure and ferroelectric properties of SBTN-films synthesized by sol-gel method
Problemy fiziki, matematiki i tehniki, no. 1 (2017), pp. 17-21.

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The study of restorative and crystallization annealing on ferroelectric properties of SBTN-films with concentration of niobium 10–50 wt. % synthesized by the sol-gel method is presents. Effect of recovery annealing on the oxygen content in the SBTN ferroelectric film connected with the mass concentration of niobium is described.
Mots-clés : ferroelectric
Keywords: non-volatile memory, sol-gel method, perovskite structure, crystallization and recovery annealing, capacitor layer, defects, residual polarization, SBTN-film.
@article{PFMT_2017_1_a2,
     author = {V. V. Sidsky and A. V. Semchenko and V. V. Kolos and A. N. Pyatlitski and V. A. Solodukha and N. S. Kovalchuk},
     title = {Effect of heat treatment conditions on the structure and ferroelectric properties of {SBTN-films} synthesized by sol-gel method},
     journal = {Problemy fiziki, matematiki i tehniki},
     pages = {17--21},
     publisher = {mathdoc},
     number = {1},
     year = {2017},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/PFMT_2017_1_a2/}
}
TY  - JOUR
AU  - V. V. Sidsky
AU  - A. V. Semchenko
AU  - V. V. Kolos
AU  - A. N. Pyatlitski
AU  - V. A. Solodukha
AU  - N. S. Kovalchuk
TI  - Effect of heat treatment conditions on the structure and ferroelectric properties of SBTN-films synthesized by sol-gel method
JO  - Problemy fiziki, matematiki i tehniki
PY  - 2017
SP  - 17
EP  - 21
IS  - 1
PB  - mathdoc
UR  - http://geodesic.mathdoc.fr/item/PFMT_2017_1_a2/
LA  - ru
ID  - PFMT_2017_1_a2
ER  - 
%0 Journal Article
%A V. V. Sidsky
%A A. V. Semchenko
%A V. V. Kolos
%A A. N. Pyatlitski
%A V. A. Solodukha
%A N. S. Kovalchuk
%T Effect of heat treatment conditions on the structure and ferroelectric properties of SBTN-films synthesized by sol-gel method
%J Problemy fiziki, matematiki i tehniki
%D 2017
%P 17-21
%N 1
%I mathdoc
%U http://geodesic.mathdoc.fr/item/PFMT_2017_1_a2/
%G ru
%F PFMT_2017_1_a2
V. V. Sidsky; A. V. Semchenko; V. V. Kolos; A. N. Pyatlitski; V. A. Solodukha; N. S. Kovalchuk. Effect of heat treatment conditions on the structure and ferroelectric properties of SBTN-films synthesized by sol-gel method. Problemy fiziki, matematiki i tehniki, no. 1 (2017), pp. 17-21. http://geodesic.mathdoc.fr/item/PFMT_2017_1_a2/

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