Geodesic
Formation of titanium nitride films by reactive magnetron sputtering under low pressure
Problemy fiziki, matematiki i tehniki, no. 2 (2016), pp. 12-17.

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The processes of reactive magnetron sputtering of titanium in the atmosphere of Ar/N$_2$ working gases under low pressure were studied. It was established that during high vacuum operating mode of magnetron sputtering system and high pumping rates under conditions of stabilization of the magnetron power the discharge voltage univalently depends on the concentration of nitrogen in the chamber, i. e., the characteristic hysteresis usual for reactive magnetron sputtering processes was not observed. At the same time titanium nitride layers with specific resistance less than 70 $\mu\Omega$ cm and microhardness greater than 28 GPa can be obtained with good reproducibility.
Keywords: reactive magnetron sputtering, microhardness, volume ware.
Mots-clés : titanium nitride, friction coefficient 
@article{PFMT_2016_2_a1,
     author = {A. P. Dostanko and D. A. Golosov and S. M. Zavadski and S. N. Melnikov and J. E. Okojie and J. D. Kotingo and G. M. Ruban},
     title = {Formation of titanium nitride films by reactive magnetron sputtering under low pressure},
     journal = {Problemy fiziki, matematiki i tehniki},
     pages = {12--17},
     publisher = {mathdoc},
     number = {2},
     year = {2016},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/PFMT_2016_2_a1/}
}
TY  - JOUR
AU  - A. P. Dostanko
AU  - D. A. Golosov
AU  - S. M. Zavadski
AU  - S. N. Melnikov
AU  - J. E. Okojie
AU  - J. D. Kotingo
AU  - G. M. Ruban
TI  - Formation of titanium nitride films by reactive magnetron sputtering under low pressure
JO  - Problemy fiziki, matematiki i tehniki
PY  - 2016
SP  - 12
EP  - 17
IS  - 2
PB  - mathdoc
UR  - http://geodesic.mathdoc.fr/item/PFMT_2016_2_a1/
LA  - ru
ID  - PFMT_2016_2_a1
ER  - 
%0 Journal Article
%A A. P. Dostanko
%A D. A. Golosov
%A S. M. Zavadski
%A S. N. Melnikov
%A J. E. Okojie
%A J. D. Kotingo
%A G. M. Ruban
%T Formation of titanium nitride films by reactive magnetron sputtering under low pressure
%J Problemy fiziki, matematiki i tehniki
%D 2016
%P 12-17
%N 2
%I mathdoc
%U http://geodesic.mathdoc.fr/item/PFMT_2016_2_a1/
%G ru
%F PFMT_2016_2_a1
A. P. Dostanko; D. A. Golosov; S. M. Zavadski; S. N. Melnikov; J. E. Okojie; J. D. Kotingo; G. M. Ruban. Formation of titanium nitride films by reactive magnetron sputtering under low pressure. Problemy fiziki, matematiki i tehniki, no. 2 (2016), pp. 12-17. http://geodesic.mathdoc.fr/item/PFMT_2016_2_a1/

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