Geodesic
Solar cells with $\mathrm{Cu_xIn_xZn_{2-2x}Se_2}$ absorber layer
Problemy fiziki, matematiki i tehniki, no. 4 (2015), pp. 41-44.

Voir la notice de l'article provenant de la source Math-Net.Ru

Thin-film solar cells with the $\mathrm{Cu_xIn_xZn_{2-2x}Se_2}$ (CIZS) absorber layer of on glass substrates are created. The given semiconductor material satisfies physical requirements for materials for photo-electric converters, and requirements for depreciation of solar cells production. Preliminary results of researches showed that glass$/\mathrm{Mo/Cu_xIn_xZn_{2-2x}Se_2/CdS/ZnO/Al}$-$\mathrm{Ni}$ thin film solar cells can possess efficiency more than 10%.
Mots-clés : $\mathrm{Cu_xIn_xZn_{2-2x}Se_2}$
Keywords: thin films, solar cells, physical characteristics, efficiency. 
@article{PFMT_2015_4_a7,
     author = {V. V. Khoroshko and I. N. Tsyrelchuk and V. F. Gremenok and A. N. Pyatlitski},
     title = {Solar cells with $\mathrm{Cu_xIn_xZn_{2-2x}Se_2}$ absorber layer},
     journal = {Problemy fiziki, matematiki i tehniki},
     pages = {41--44},
     publisher = {mathdoc},
     number = {4},
     year = {2015},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/PFMT_2015_4_a7/}
}
TY  - JOUR
AU  - V. V. Khoroshko
AU  - I. N. Tsyrelchuk
AU  - V. F. Gremenok
AU  - A. N. Pyatlitski
TI  - Solar cells with $\mathrm{Cu_xIn_xZn_{2-2x}Se_2}$ absorber layer
JO  - Problemy fiziki, matematiki i tehniki
PY  - 2015
SP  - 41
EP  - 44
IS  - 4
PB  - mathdoc
UR  - http://geodesic.mathdoc.fr/item/PFMT_2015_4_a7/
LA  - ru
ID  - PFMT_2015_4_a7
ER  - 
%0 Journal Article
%A V. V. Khoroshko
%A I. N. Tsyrelchuk
%A V. F. Gremenok
%A A. N. Pyatlitski
%T Solar cells with $\mathrm{Cu_xIn_xZn_{2-2x}Se_2}$ absorber layer
%J Problemy fiziki, matematiki i tehniki
%D 2015
%P 41-44
%N 4
%I mathdoc
%U http://geodesic.mathdoc.fr/item/PFMT_2015_4_a7/
%G ru
%F PFMT_2015_4_a7
V. V. Khoroshko; I. N. Tsyrelchuk; V. F. Gremenok; A. N. Pyatlitski. Solar cells with $\mathrm{Cu_xIn_xZn_{2-2x}Se_2}$ absorber layer. Problemy fiziki, matematiki i tehniki, no. 4 (2015), pp. 41-44. http://geodesic.mathdoc.fr/item/PFMT_2015_4_a7/

[1] Datasheet, , Stion Corporation, 2013 (Date of access: 20.07.2015) http://www.stion.com/wp-content/uploads/2015/05/Stion_Elevation4_Framed_300-100-002_RevA.pdf

[2] V. F. Gremenok, M. S. Tivanov, V. B. Zalecskii, Solnechnye elementy na osnove poluprovodnikovykh materialov, Izd. Tsentr BGU, Minsk, 2007, 222 pp.

[3] V. V. Khoroshko i dr., “Optimizatsiya parametrov pogloschayuschego sloya $\mathrm{Cu_xIn_xZn_{2-2x}Se_2}$ dlya tonkoplenochnykh solnechnykh elementov”, Izvestiya natsionalnoi akademii nauk Belarusi. Seriya fiziko-matematicheskikh nauk, 2014, no. 2, 91–96

[4] I. N. Tsyrelchuk, V. V. Khoroshko, V. F. Gremenok, V. A. Ivanov, “Elektricheskie svoistva tonkikh plenok poluprovodnikovykh tverdykh rastvorov $\mathrm{(CuInSe_2)_x}$–$\mathrm{(2ZnSe)_{1-x}}$”, Doklady BGUIR, 2013, no. 8(78), 95–100

[5] V. Yu. Rud i dr., “Fotoelektricheskie svoistva poverkhnostno-barernykh struktur na osnove plenok $\mathrm{Zn_{2-2x}Cu_xIn_xSe_2}$”, Fizika i tekhnika poluprovodnikov, 39:9 (2005), 1070–1074