Geodesic
The analytical solution of the inverse problem for the spectrophotometric transparent layer on an absorbing substrate
Problemy fiziki, matematiki i tehniki, no. 4 (2015), pp. 31-37 Cet article a éte moissonné depuis la source Math-Net.Ru

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For the first time, an analytical and numerical solution of the inverse problem for the spectrophotometric silicon dioxide layer on a silicon substrate is obtained. Analytical determination of the parameters of the layer and the substrate can be used as the first approximation in numerical calculations of the parameters of the three-layer model. Inhomogeneous structure of the surface and transition layers is interpreted by Maxwell–Garnett Bruggeman model.
Keywords: interference spectrophotometry, transition layer, optical constants, thickness of the layer. 
@article{PFMT_2015_4_a5,
     author = {N. I. Stas'kov},
     title = {The analytical solution of the inverse problem for the spectrophotometric transparent layer on an absorbing substrate},
     journal = {Problemy fiziki, matematiki i tehniki},
     pages = {31--37},
     year = {2015},
     number = {4},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/PFMT_2015_4_a5/}
}
TY  - JOUR
AU  - N. I. Stas'kov
TI  - The analytical solution of the inverse problem for the spectrophotometric transparent layer on an absorbing substrate
JO  - Problemy fiziki, matematiki i tehniki
PY  - 2015
SP  - 31
EP  - 37
IS  - 4
UR  - http://geodesic.mathdoc.fr/item/PFMT_2015_4_a5/
LA  - ru
ID  - PFMT_2015_4_a5
ER  - 
%0 Journal Article
%A N. I. Stas'kov
%T The analytical solution of the inverse problem for the spectrophotometric transparent layer on an absorbing substrate
%J Problemy fiziki, matematiki i tehniki
%D 2015
%P 31-37
%N 4
%U http://geodesic.mathdoc.fr/item/PFMT_2015_4_a5/
%G ru
%F PFMT_2015_4_a5
N. I. Stas'kov. The analytical solution of the inverse problem for the spectrophotometric transparent layer on an absorbing substrate. Problemy fiziki, matematiki i tehniki, no. 4 (2015), pp. 31-37. http://geodesic.mathdoc.fr/item/PFMT_2015_4_a5/

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