Geodesic
Ellipsometry of the transitive layers semiconductor--dielectric
Problemy fiziki, matematiki i tehniki, no. 2 (2013), pp. 18-24

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The polarizability bound of the layer with its optical thickness is established for thin oxide surfaces on a silicon substrate. It is revealed that the structure of the inhomogeneous surface layer can be interpreted by a five-layer model with 11 parameters at the heat treatment of the silicon plates.
Keywords: ellipsometry, optical model, transition layer, rough and optically inhomogeneous layers, polarizability. 
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     author = {N. I. Stas{\textquoteright}kov and I. V. Ivashkevich and N. A. Krekoten},
     title = {Ellipsometry of the transitive layers semiconductor--dielectric},
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N. I. Stas’kov; I. V. Ivashkevich; N. A. Krekoten. Ellipsometry of the transitive layers semiconductor--dielectric. Problemy fiziki, matematiki i tehniki, no. 2 (2013), pp. 18-24. http://geodesic.mathdoc.fr/item/PFMT_2013_2_a2/