Geodesic
Generation of microwave chaotic oscillations in CMOS structure
Russian journal of nonlinear dynamics, Tome 6 (2010) no. 1, pp. 159-167

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Chaotic oscillator based on CMOS structure is proposed, fabricated and investigated. Monolithic IC сhip of the oscillator is fabricated in 0.18 process technology. As is shown, the transition to chaos in this system occurs through destruction of 2D torus. In experiments with the IC, stable generation of chaotic oscillations is observed, with spectral density maximum in the range 2.8–3.8 GHz.
Keywords: chaotic oscillations generation, chaotic systems, CMOS structures
Mots-clés : bifurcations. 
@article{ND_2010_6_1_a10,
     author = {A. S. Dmitriev and E. V. Efremova and A. Yu. Nikishov and A. I. Panas},
     title = {Generation of microwave chaotic oscillations in {CMOS} structure},
     journal = {Russian journal of nonlinear dynamics},
     pages = {159--167},
     publisher = {mathdoc},
     volume = {6},
     number = {1},
     year = {2010},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/ND_2010_6_1_a10/}
}
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A. S. Dmitriev; E. V. Efremova; A. Yu. Nikishov; A. I. Panas. Generation of microwave chaotic oscillations in CMOS structure. Russian journal of nonlinear dynamics, Tome 6 (2010) no. 1, pp. 159-167. http://geodesic.mathdoc.fr/item/ND_2010_6_1_a10/