Geodesic
Simulation of DIBL effect in 25 nm SOIFinFET with the different body shapes
Nanosistemy: fizika, himiâ, matematika, Tome 8 (2017) no. 1, pp. 71-74.

Voir la notice de l'article provenant de la source Math-Net.Ru

Short channel effects, such as DIBL are compared for SOI-FinFETs with different silicon body geometries. The original device considered was straight without narrowing at the top and a set of devices that exhibit the mentioned narrowing, up to the extreme case where the top of the gate has no surface and so the body cross-section is essentially a triangle. We have studied five different variations from the original geometry of a 25 nm gate length SOI-FinFET device with 1.5 nm thick oxide layer. The P-type channel had a doping concentration of 10$^{15}$cm$^{-3}$ and n-type S/D areas are doped at concentrations of 10$^{20}$cm$^{-3}$. The silicon body of the device accordingly had a height of 30 nm and a width of 12 nm. Simulation results show the source-drain barrier decreasing with increasing the upper body thickness. The DIBL effect of the considered FinFETs depends on upper body thickness, tending to increase with thicker upper body widths. Results of a comparison of two devices with different shapes but with the same cross-sectional area shows the relationship mainly depends on the shape rather than the cross-section area of the device body.
Keywords: FinFET, DIBL, potential barrier. 
@article{NANO_2017_8_1_a9,
     author = {A. E. Atamuratov and A. Abdikarimov and M. Khalilloev and Z. A. Atamuratova and R. Rahmanov and A. Garcia-Loureiro and A. Yusupov},
     title = {Simulation of {DIBL} effect in 25 nm {SOIFinFET} with the different body shapes},
     journal = {Nanosistemy: fizika, himi\^a, matematika},
     pages = {71--74},
     publisher = {mathdoc},
     volume = {8},
     number = {1},
     year = {2017},
     language = {en},
     url = {http://geodesic.mathdoc.fr/item/NANO_2017_8_1_a9/}
}
TY  - JOUR
AU  - A. E. Atamuratov
AU  - A. Abdikarimov
AU  - M. Khalilloev
AU  - Z. A. Atamuratova
AU  - R. Rahmanov
AU  - A. Garcia-Loureiro
AU  - A. Yusupov
TI  - Simulation of DIBL effect in 25 nm SOIFinFET with the different body shapes
JO  - Nanosistemy: fizika, himiâ, matematika
PY  - 2017
SP  - 71
EP  - 74
VL  - 8
IS  - 1
PB  - mathdoc
UR  - http://geodesic.mathdoc.fr/item/NANO_2017_8_1_a9/
LA  - en
ID  - NANO_2017_8_1_a9
ER  - 
%0 Journal Article
%A A. E. Atamuratov
%A A. Abdikarimov
%A M. Khalilloev
%A Z. A. Atamuratova
%A R. Rahmanov
%A A. Garcia-Loureiro
%A A. Yusupov
%T Simulation of DIBL effect in 25 nm SOIFinFET with the different body shapes
%J Nanosistemy: fizika, himiâ, matematika
%D 2017
%P 71-74
%V 8
%N 1
%I mathdoc
%U http://geodesic.mathdoc.fr/item/NANO_2017_8_1_a9/
%G en
%F NANO_2017_8_1_a9
A. E. Atamuratov; A. Abdikarimov; M. Khalilloev; Z. A. Atamuratova; R. Rahmanov; A. Garcia-Loureiro; A. Yusupov. Simulation of DIBL effect in 25 nm SOIFinFET with the different body shapes. Nanosistemy: fizika, himiâ, matematika, Tome 8 (2017) no. 1, pp. 71-74. http://geodesic.mathdoc.fr/item/NANO_2017_8_1_a9/