Geodesic
Thermomechanical effects of radiation origin in microelectronics products
Matematičeskoe modelirovanie, Tome 34 (2022) no. 2, pp. 58-70.

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A mathematical model of the thermomechanical effect of penetrating radiation on a microelectronic product is presented. The model is based on the thermoelasticity equations, which are a consequence of the quantum kinetic equations for phonons. Heat transport is described by the law of conservation of energy and the Cattaneo equation, which takes into account the finite rate of heat propagation. Lattice vibrations are considered in the approximation of the linear theory of elasticity. In general, the model determines the distribution of temperature, energy flow, deformation and stress. Difference schemes have been developed for solving the model equations. The effectiveness of the developed model was tested by solving the problem of thermal shock.
Keywords: penetrating radiation, thermomechanical effect, thermoelasticity, thermal conductivity, difference scheme, thermal shock.
Mots-clés : phonons 
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Yu. A. Volkov; M. Yu. Vyrostkov; M. B. Markov; I. A. Tarakanov. Thermomechanical effects of radiation origin in microelectronics products. Matematičeskoe modelirovanie, Tome 34 (2022) no. 2, pp. 58-70. http://geodesic.mathdoc.fr/item/MM_2022_34_2_a4/

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