Geodesic
The simulation of the electron-phonon interaction in silicon
Matematičeskoe modelirovanie, Tome 30 (2018) no. 12, pp. 3-16

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The processes of charge transfer in semiconductors are considered. The model is constructed on the basis of quantum kinetic equations for the distribution functions of conduction electrons and holes of the valence band in the phase space of coordinates and quasimomenta. Scattering of charge carriers is modeled by the statistical particle method. The basic processes of electron scattering by lattice nonidealities are considered. The calculations of the electron drift velocity in pure and doped silicon are presented.
Keywords: kinetic equations, particle method, scattering frequency, drift velocity. 
@article{MM_2018_30_12_a0,
     author = {A. V. Berezin and Yu. A. Volkov and M. B. Markov and I. A. Tarakanov},
     title = {The simulation of the electron-phonon interaction in silicon},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {3--16},
     publisher = {mathdoc},
     volume = {30},
     number = {12},
     year = {2018},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_2018_30_12_a0/}
}
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A. V. Berezin; Yu. A. Volkov; M. B. Markov; I. A. Tarakanov. The simulation of the electron-phonon interaction in silicon. Matematičeskoe modelirovanie, Tome 30 (2018) no. 12, pp. 3-16. http://geodesic.mathdoc.fr/item/MM_2018_30_12_a0/