Geodesic
On calculation of the electric potential for 2D silicon transistor with a silicon oxide nanochannel
Matematičeskoe modelirovanie, Tome 22 (2010) no. 9, pp. 79-94

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We study the problem on calculation of the electric potential for the 2D silicon transistor occupying a domain $\Omega$ with an adjoint silicon oxide nanochannel occupying a domain $\Omega_G$. By numerical simulations we justify the reduction of this problem in the domain $\Omega\cup\Omega_G$ to that for finding the potential only in the domain $\Omega$.
Keywords: hydrodynamical model, metal oxide semiconductor field effect transistor, the parabolic regularization, longitudinal-transverse sweep method.
Mots-clés : the Poisson equation 
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     author = {A. M. Blokhin and A. S. Ibragimova},
     title = {On calculation of the electric potential for {2D} silicon transistor with a silicon oxide nanochannel},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {79--94},
     publisher = {mathdoc},
     volume = {22},
     number = {9},
     year = {2010},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_2010_22_9_a5/}
}
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A. M. Blokhin; A. S. Ibragimova. On calculation of the electric potential for 2D silicon transistor with a silicon oxide nanochannel. Matematičeskoe modelirovanie, Tome 22 (2010) no. 9, pp. 79-94. http://geodesic.mathdoc.fr/item/MM_2010_22_9_a5/