Matematičeskoe modelirovanie, Tome 10 (1998) no. 7, pp. 21-24
Citer cet article
T. A. Kholomina. Implantation regime influence upon parameters of $\mathrm{Si0}_2$ films on silicon. Matematičeskoe modelirovanie, Tome 10 (1998) no. 7, pp. 21-24. http://geodesic.mathdoc.fr/item/MM_1998_10_7_a1/
@article{MM_1998_10_7_a1,
author = {T. A. Kholomina},
title = {Implantation regime influence upon parameters of~$\mathrm{Si0}_2$ films on silicon},
journal = {Matemati\v{c}eskoe modelirovanie},
pages = {21--24},
year = {1998},
volume = {10},
number = {7},
language = {ru},
url = {http://geodesic.mathdoc.fr/item/MM_1998_10_7_a1/}
}
TY - JOUR
AU - T. A. Kholomina
TI - Implantation regime influence upon parameters of $\mathrm{Si0}_2$ films on silicon
JO - Matematičeskoe modelirovanie
PY - 1998
SP - 21
EP - 24
VL - 10
IS - 7
UR - http://geodesic.mathdoc.fr/item/MM_1998_10_7_a1/
LA - ru
ID - MM_1998_10_7_a1
ER -
%0 Journal Article
%A T. A. Kholomina
%T Implantation regime influence upon parameters of $\mathrm{Si0}_2$ films on silicon
%J Matematičeskoe modelirovanie
%D 1998
%P 21-24
%V 10
%N 7
%U http://geodesic.mathdoc.fr/item/MM_1998_10_7_a1/
%G ru
%F MM_1998_10_7_a1
Regressional equations shown the implantation regime influence upon value of mobile charge, dielectric constant and electrical resistance of $\mathrm{Si0}_2$ films on silicon are obtained.
