Geodesic
Implantation regime influence upon parameters of~$\mathrm{Si0}_2$ films on silicon
Matematičeskoe modelirovanie, Tome 10 (1998) no. 7, pp. 21-24.

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Regressional equations shown the implantation regime influence upon value of mobile charge, dielectric constant and electrical resistance of $\mathrm{Si0}_2$ films on silicon are obtained. 
@article{MM_1998_10_7_a1,
     author = {T. A. Kholomina},
     title = {Implantation regime influence upon parameters of~$\mathrm{Si0}_2$ films on silicon},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {21--24},
     publisher = {mathdoc},
     volume = {10},
     number = {7},
     year = {1998},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1998_10_7_a1/}
}
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T. A. Kholomina. Implantation regime influence upon parameters of~$\mathrm{Si0}_2$ films on silicon. Matematičeskoe modelirovanie, Tome 10 (1998) no. 7, pp. 21-24. http://geodesic.mathdoc.fr/item/MM_1998_10_7_a1/