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Problem of mathematical modelling of silicon oxidation
Matematičeskoe modelirovanie, Tome 6 (1994) no. 9, pp. 68-78 Cet article a éte moissonné depuis la source Math-Net.Ru

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In the paper a mathematical model of silicon oxidation is considered by using effective asymptotic methods. The well-known law of parabolic growth of oxide film is obtained. 
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     author = {K. A. Volosov and L. B. Arkhipenko},
     title = {Problem of mathematical modelling of silicon oxidation},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {68--78},
     year = {1994},
     volume = {6},
     number = {9},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1994_6_9_a8/}
}
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K. A. Volosov; L. B. Arkhipenko. Problem of mathematical modelling of silicon oxidation. Matematičeskoe modelirovanie, Tome 6 (1994) no. 9, pp. 68-78. http://geodesic.mathdoc.fr/item/MM_1994_6_9_a8/