Matematičeskoe modelirovanie, Tome 3 (1991) no. 12, pp. 78-85
Citer cet article
L. V. Kalachev; I. A. Obukhov. The asymptotic of the Poisson equation solution in the semiconductor structure under external field. Matematičeskoe modelirovanie, Tome 3 (1991) no. 12, pp. 78-85. http://geodesic.mathdoc.fr/item/MM_1991_3_12_a7/
@article{MM_1991_3_12_a7,
author = {L. V. Kalachev and I. A. Obukhov},
title = {The asymptotic of the {Poisson} equation solution in the semiconductor structure under external field},
journal = {Matemati\v{c}eskoe modelirovanie},
pages = {78--85},
year = {1991},
volume = {3},
number = {12},
language = {ru},
url = {http://geodesic.mathdoc.fr/item/MM_1991_3_12_a7/}
}
TY - JOUR
AU - L. V. Kalachev
AU - I. A. Obukhov
TI - The asymptotic of the Poisson equation solution in the semiconductor structure under external field
JO - Matematičeskoe modelirovanie
PY - 1991
SP - 78
EP - 85
VL - 3
IS - 12
UR - http://geodesic.mathdoc.fr/item/MM_1991_3_12_a7/
LA - ru
ID - MM_1991_3_12_a7
ER -
%0 Journal Article
%A L. V. Kalachev
%A I. A. Obukhov
%T The asymptotic of the Poisson equation solution in the semiconductor structure under external field
%J Matematičeskoe modelirovanie
%D 1991
%P 78-85
%V 3
%N 12
%U http://geodesic.mathdoc.fr/item/MM_1991_3_12_a7/
%G ru
%F MM_1991_3_12_a7
The asymptotic approximation for the Poisson equation solution is built through the boundary function method. This equation describes the electrostatic potential distribution in two-dimensional region under the external electric field.
