Geodesic
The asymptotic of the Poisson equation solution in the semiconductor structure under external field
Matematičeskoe modelirovanie, Tome 3 (1991) no. 12, pp. 78-85 Cet article a éte moissonné depuis la source Math-Net.Ru

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The asymptotic approximation for the Poisson equation solution is built through the boundary function method. This equation describes the electrostatic potential distribution in two-dimensional region under the external electric field. 
@article{MM_1991_3_12_a7,
     author = {L. V. Kalachev and I. A. Obukhov},
     title = {The asymptotic of the {Poisson} equation solution in the semiconductor structure under external field},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {78--85},
     year = {1991},
     volume = {3},
     number = {12},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1991_3_12_a7/}
}
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L. V. Kalachev; I. A. Obukhov. The asymptotic of the Poisson equation solution in the semiconductor structure under external field. Matematičeskoe modelirovanie, Tome 3 (1991) no. 12, pp. 78-85. http://geodesic.mathdoc.fr/item/MM_1991_3_12_a7/