Tunable spin-wave delay line based on ferrite and vanadium dioxide

A. A. Nikitin ; A. E. Komlev ; A. A. Nikitin ; A. B. Ustinov

Izvestiya VUZ. Applied Nonlinear Dynamics, Tome 30 (2022) no. 5, pp. 605-616

Résumé

One of the key elements for modern microwave circuits is a delay line, which is widely utilized for the signal generation as well as processing. Spin-wave delay lines based on ferrite films provide a high delay time and small dimensions. Typically, the performance characteristics of such lines are tuned by the variation of an externally applied magnetic field characterized by some drawbacks. The phenomenon of a metal-insulator transition (MIT) in the phase change materials permits to improve the performance characteristics of the spin-wave delay lines. In particular, this concept allows to reduce the power consumption and improve the control speed of a delay time. Aim. Development of a tunable spin-wave delay line based on ferrite and vanadium dioxide films, as well as the study of its performance characteristics. Methods. Experimental investigations were carried out for the delay line composed of the yttrium iron garnet (YIG) and vanadium dioxide (VO$_2$) films. The ferrite waveguide was fabricated from a single-crystal YIG film grown on a gallium gadolinium garnet substrate. A vanadium dioxide film was formed on a silicon dioxide substrate by DC reactive magnetron sputtering. The microwave measurements were carried out using the vector network analyzer R$\circledR$ZVA40. Results. It was shown that heating of the VO$_2$ film induces a sufficient drop of its resistance that causes the transformation of the spin-wave dispersion characteristic. This leads to the decrease in the group velocity of the propagating waves providing a growth of a delay time. Namely, experimental structure of 5-mm length offers a tunable time delay range from 130 up to 150 ns at the operating frequency of 4.33 GHz. Conclusion. A proof-of-principle for the MIT control of the delay time composed on the YIG-VO$_2$ structure has been presented. It was shown that a switch of VO$_2$ film from the isolating into conducting state produces a 15% change in the delay time. The considered microwave delay lines look favorable for applications as a complimentary part to the traditional approach for general computing and microwave signal processing.

Détail

Keywords: Spin waves, ferrites, metal-insulator transition, vanadium dioxide, microwave devices.