On the well-posedness of mathematical models of diffusion due to a sharply focused electron probe in a homogeneous semiconductor material
Itogi nauki i tehniki. Sovremennaâ matematika i eë priloženiâ. Tematičeskie obzory, Proceedings of the Voronezh spring mathematical school “Modern methods of the theory of boundary-value problems. Pontryagin readings – XXX”. Voronezh, May 3-9, 2019. Part 4, Tome 193 (2021), pp. 122-129

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In this paper, we compare qualitative properties of two- and three-dimensional mathematical models of the diffusion of particles (nonequilibrium minority charge carriers, excitons) generated by a sharply focused electron probe in a homogeneous semiconductor material. We show that the mathematical models considered are well posed and can be used for estimating electrophysical parameters of homogeneous semiconductor targets based on the results of experimental measurements.
Keywords: mathematical model, differential equation, partial derivative, Cauchy problem, electron probe, semiconductor, well-posedness, uniqueness, continuous dependence on data
Mots-clés : identification.
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     title = {On the well-posedness of mathematical models of diffusion due to a sharply focused electron probe in a homogeneous semiconductor material},
     journal = {Itogi nauki i tehniki. Sovremenna\^a matematika i e\"e prilo\v{z}eni\^a. Temati\v{c}eskie obzory},
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M. A. Stepovich; D. V. Turtin; E. V. Seregina. On the well-posedness of mathematical models of diffusion due to a sharply focused electron probe in a homogeneous semiconductor material. Itogi nauki i tehniki. Sovremennaâ matematika i eë priloženiâ. Tematičeskie obzory, Proceedings of the Voronezh spring mathematical school “Modern methods of the theory of boundary-value problems. Pontryagin readings – XXX”. Voronezh, May 3-9, 2019. Part 4, Tome 193 (2021), pp. 122-129. http://geodesic.mathdoc.fr/item/INTO_2021_193_a12/