Doklady Akademii Nauk, Tome 346 (1996) no. 5, pp. 616-618
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M. I. Petrov; D. A. Balaev; K. A. Shaykhutdinov; B. P. Khrustalev; K. S. Aleksandrov. Critical currents in composites HTSC + semiconductor at different concentrations of carriers. Doklady Akademii Nauk, Tome 346 (1996) no. 5, pp. 616-618. http://geodesic.mathdoc.fr/item/DAN_1996_346_5_a10/
@article{DAN_1996_346_5_a10,
author = {M. I. Petrov and D. A. Balaev and K. A. Shaykhutdinov and B. P. Khrustalev and K. S. Aleksandrov},
title = {Critical currents in composites {HTSC} + semiconductor at different concentrations of carriers},
journal = {Doklady Akademii Nauk},
pages = {616--618},
year = {1996},
volume = {346},
number = {5},
language = {ru},
url = {http://geodesic.mathdoc.fr/item/DAN_1996_346_5_a10/}
}
TY - JOUR
AU - M. I. Petrov
AU - D. A. Balaev
AU - K. A. Shaykhutdinov
AU - B. P. Khrustalev
AU - K. S. Aleksandrov
TI - Critical currents in composites HTSC + semiconductor at different concentrations of carriers
JO - Doklady Akademii Nauk
PY - 1996
SP - 616
EP - 618
VL - 346
IS - 5
UR - http://geodesic.mathdoc.fr/item/DAN_1996_346_5_a10/
LA - ru
ID - DAN_1996_346_5_a10
ER -
%0 Journal Article
%A M. I. Petrov
%A D. A. Balaev
%A K. A. Shaykhutdinov
%A B. P. Khrustalev
%A K. S. Aleksandrov
%T Critical currents in composites HTSC + semiconductor at different concentrations of carriers
%J Doklady Akademii Nauk
%D 1996
%P 616-618
%V 346
%N 5
%U http://geodesic.mathdoc.fr/item/DAN_1996_346_5_a10/
%G ru
%F DAN_1996_346_5_a10
