Geodesic
Critical currents in composites HTSC + semiconductor at different concentrations of carriers
Doklady Akademii Nauk, Tome 346 (1996) no. 5, pp. 616-618 Cet article a éte moissonné depuis la source Math-Net.Ru

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@article{DAN_1996_346_5_a10,
     author = {M. I. Petrov and D. A. Balaev and K. A. Shaykhutdinov and B. P. Khrustalev and K. S. Aleksandrov},
     title = {Critical currents in composites {HTSC} + semiconductor at different concentrations of carriers},
     journal = {Doklady Akademii Nauk},
     pages = {616--618},
     year = {1996},
     volume = {346},
     number = {5},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/DAN_1996_346_5_a10/}
}
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M. I. Petrov; D. A. Balaev; K. A. Shaykhutdinov; B. P. Khrustalev; K. S. Aleksandrov. Critical currents in composites HTSC + semiconductor at different concentrations of carriers. Doklady Akademii Nauk, Tome 346 (1996) no. 5, pp. 616-618. http://geodesic.mathdoc.fr/item/DAN_1996_346_5_a10/