Microtomography of semiconductor structure in the regime of induced current
Doklady Akademii Nauk, Tome 307 (1989) no. 4, pp. 840-844.

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@article{DAN_1989_307_4_a16,
     author = {S. K. Likharev and E. I. Rau and V. P. Trifonenkov and A. G. Yagola},
     title = {Microtomography of semiconductor structure in the regime of induced current},
     journal = {Doklady Akademii Nauk},
     pages = {840--844},
     publisher = {mathdoc},
     volume = {307},
     number = {4},
     year = {1989},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/DAN_1989_307_4_a16/}
}
TY  - JOUR
AU  - S. K. Likharev
AU  - E. I. Rau
AU  - V. P. Trifonenkov
AU  - A. G. Yagola
TI  - Microtomography of semiconductor structure in the regime of induced current
JO  - Doklady Akademii Nauk
PY  - 1989
SP  - 840
EP  - 844
VL  - 307
IS  - 4
PB  - mathdoc
UR  - http://geodesic.mathdoc.fr/item/DAN_1989_307_4_a16/
LA  - ru
ID  - DAN_1989_307_4_a16
ER  - 
%0 Journal Article
%A S. K. Likharev
%A E. I. Rau
%A V. P. Trifonenkov
%A A. G. Yagola
%T Microtomography of semiconductor structure in the regime of induced current
%J Doklady Akademii Nauk
%D 1989
%P 840-844
%V 307
%N 4
%I mathdoc
%U http://geodesic.mathdoc.fr/item/DAN_1989_307_4_a16/
%G ru
%F DAN_1989_307_4_a16
S. K. Likharev; E. I. Rau; V. P. Trifonenkov; A. G. Yagola. Microtomography of semiconductor structure in the regime of induced current. Doklady Akademii Nauk, Tome 307 (1989) no. 4, pp. 840-844. http://geodesic.mathdoc.fr/item/DAN_1989_307_4_a16/