Geodesic
Microtomography of semiconductor structure in the regime of induced current
Doklady Akademii Nauk, Tome 307 (1989) no. 4, pp. 840-844 Cet article a éte moissonné depuis la source Math-Net.Ru

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@article{DAN_1989_307_4_a16,
     author = {S. K. Likharev and E. I. Rau and V. P. Trifonenkov and A. G. Yagola},
     title = {Microtomography of semiconductor structure in the regime of induced current},
     journal = {Doklady Akademii Nauk},
     pages = {840--844},
     year = {1989},
     volume = {307},
     number = {4},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/DAN_1989_307_4_a16/}
}
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S. K. Likharev; E. I. Rau; V. P. Trifonenkov; A. G. Yagola. Microtomography of semiconductor structure in the regime of induced current. Doklady Akademii Nauk, Tome 307 (1989) no. 4, pp. 840-844. http://geodesic.mathdoc.fr/item/DAN_1989_307_4_a16/