Doklady Akademii Nauk, Tome 299 (1988) no. 2, pp. 358-362
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P. Kh. Khabibullaev; S. N. Abdurakhmanova; M. A. Zaikovskaya; Kh. Kh. Mannanova; B. L. Oksengendler; M. S. Yunusov. The ionization-enhanced defect production in dioped silicon. Doklady Akademii Nauk, Tome 299 (1988) no. 2, pp. 358-362. http://geodesic.mathdoc.fr/item/DAN_1988_299_2_a23/
@article{DAN_1988_299_2_a23,
author = {P. Kh. Khabibullaev and S. N. Abdurakhmanova and M. A. Zaikovskaya and Kh. Kh. Mannanova and B. L. Oksengendler and M. S. Yunusov},
title = {The ionization-enhanced defect production in dioped silicon},
journal = {Doklady Akademii Nauk},
pages = {358--362},
year = {1988},
volume = {299},
number = {2},
language = {ru},
url = {http://geodesic.mathdoc.fr/item/DAN_1988_299_2_a23/}
}
TY - JOUR
AU - P. Kh. Khabibullaev
AU - S. N. Abdurakhmanova
AU - M. A. Zaikovskaya
AU - Kh. Kh. Mannanova
AU - B. L. Oksengendler
AU - M. S. Yunusov
TI - The ionization-enhanced defect production in dioped silicon
JO - Doklady Akademii Nauk
PY - 1988
SP - 358
EP - 362
VL - 299
IS - 2
UR - http://geodesic.mathdoc.fr/item/DAN_1988_299_2_a23/
LA - ru
ID - DAN_1988_299_2_a23
ER -
%0 Journal Article
%A P. Kh. Khabibullaev
%A S. N. Abdurakhmanova
%A M. A. Zaikovskaya
%A Kh. Kh. Mannanova
%A B. L. Oksengendler
%A M. S. Yunusov
%T The ionization-enhanced defect production in dioped silicon
%J Doklady Akademii Nauk
%D 1988
%P 358-362
%V 299
%N 2
%U http://geodesic.mathdoc.fr/item/DAN_1988_299_2_a23/
%G ru
%F DAN_1988_299_2_a23
