Geodesic
The ionization-enhanced defect production in dioped silicon
Doklady Akademii Nauk, Tome 299 (1988) no. 2, pp. 358-362.

Voir la notice de l'article provenant de la source Math-Net.Ru

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     author = {P. Kh. Khabibullaev and S. N. Abdurakhmanova and M. A. Zaikovskaya and Kh. Kh. Mannanova and B. L. Oksengendler and M. S. Yunusov},
     title = {The ionization-enhanced defect production in dioped silicon},
     journal = {Doklady Akademii Nauk},
     pages = {358--362},
     publisher = {mathdoc},
     volume = {299},
     number = {2},
     year = {1988},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/DAN_1988_299_2_a23/}
}
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P. Kh. Khabibullaev; S. N. Abdurakhmanova; M. A. Zaikovskaya; Kh. Kh. Mannanova; B. L. Oksengendler; M. S. Yunusov. The ionization-enhanced defect production in dioped silicon. Doklady Akademii Nauk, Tome 299 (1988) no. 2, pp. 358-362. http://geodesic.mathdoc.fr/item/DAN_1988_299_2_a23/