Doklady Akademii Nauk, Tome 197 (1971) no. 2, pp. 319-322
Citer cet article
V. M. Gusev; N. P. Busharov; K. D. Demakov; Yu. G. Kozlov. The effect of channelling on the distribution of electrically active boron and phosphorus atoms intruded into silicon single crystals. Doklady Akademii Nauk, Tome 197 (1971) no. 2, pp. 319-322. http://geodesic.mathdoc.fr/item/DAN_1971_197_2_a19/
@article{DAN_1971_197_2_a19,
author = {V. M. Gusev and N. P. Busharov and K. D. Demakov and Yu. G. Kozlov},
title = {The effect of channelling on the distribution of electrically active boron and phosphorus atoms intruded into silicon single crystals},
journal = {Doklady Akademii Nauk},
pages = {319--322},
year = {1971},
volume = {197},
number = {2},
language = {ru},
url = {http://geodesic.mathdoc.fr/item/DAN_1971_197_2_a19/}
}
TY - JOUR
AU - V. M. Gusev
AU - N. P. Busharov
AU - K. D. Demakov
AU - Yu. G. Kozlov
TI - The effect of channelling on the distribution of electrically active boron and phosphorus atoms intruded into silicon single crystals
JO - Doklady Akademii Nauk
PY - 1971
SP - 319
EP - 322
VL - 197
IS - 2
UR - http://geodesic.mathdoc.fr/item/DAN_1971_197_2_a19/
LA - ru
ID - DAN_1971_197_2_a19
ER -
%0 Journal Article
%A V. M. Gusev
%A N. P. Busharov
%A K. D. Demakov
%A Yu. G. Kozlov
%T The effect of channelling on the distribution of electrically active boron and phosphorus atoms intruded into silicon single crystals
%J Doklady Akademii Nauk
%D 1971
%P 319-322
%V 197
%N 2
%U http://geodesic.mathdoc.fr/item/DAN_1971_197_2_a19/
%G ru
%F DAN_1971_197_2_a19
