Geodesic
The effect of channelling on the distribution of electrically active boron and phosphorus atoms intruded into silicon single crystals
Doklady Akademii Nauk, Tome 197 (1971) no. 2, pp. 319-322 Cet article a éte moissonné depuis la source Math-Net.Ru

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@article{DAN_1971_197_2_a19,
     author = {V. M. Gusev and N. P. Busharov and K. D. Demakov and Yu. G. Kozlov},
     title = {The effect of channelling on the distribution of electrically active boron and phosphorus atoms intruded into silicon single crystals},
     journal = {Doklady Akademii Nauk},
     pages = {319--322},
     year = {1971},
     volume = {197},
     number = {2},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/DAN_1971_197_2_a19/}
}
TY  - JOUR
AU  - V. M. Gusev
AU  - N. P. Busharov
AU  - K. D. Demakov
AU  - Yu. G. Kozlov
TI  - The effect of channelling on the distribution of electrically active boron and phosphorus atoms intruded into silicon single crystals
JO  - Doklady Akademii Nauk
PY  - 1971
SP  - 319
EP  - 322
VL  - 197
IS  - 2
UR  - http://geodesic.mathdoc.fr/item/DAN_1971_197_2_a19/
LA  - ru
ID  - DAN_1971_197_2_a19
ER  - 
%0 Journal Article
%A V. M. Gusev
%A N. P. Busharov
%A K. D. Demakov
%A Yu. G. Kozlov
%T The effect of channelling on the distribution of electrically active boron and phosphorus atoms intruded into silicon single crystals
%J Doklady Akademii Nauk
%D 1971
%P 319-322
%V 197
%N 2
%U http://geodesic.mathdoc.fr/item/DAN_1971_197_2_a19/
%G ru
%F DAN_1971_197_2_a19
V. M. Gusev; N. P. Busharov; K. D. Demakov; Yu. G. Kozlov. The effect of channelling on the distribution of electrically active boron and phosphorus atoms intruded into silicon single crystals. Doklady Akademii Nauk, Tome 197 (1971) no. 2, pp. 319-322. http://geodesic.mathdoc.fr/item/DAN_1971_197_2_a19/