Geodesic
The effect of channelling on the distribution of electrically active boron and phosphorus atoms intruded into silicon single crystals
Doklady Akademii Nauk, Tome 197 (1971) no. 2, pp. 319-322.

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     author = {V. M. Gusev and N. P. Busharov and K. D. Demakov and Yu. G. Kozlov},
     title = {The effect of channelling on the distribution of electrically active boron and phosphorus atoms intruded into silicon single crystals},
     journal = {Doklady Akademii Nauk},
     pages = {319--322},
     publisher = {mathdoc},
     volume = {197},
     number = {2},
     year = {1971},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/DAN_1971_197_2_a19/}
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V. M. Gusev; N. P. Busharov; K. D. Demakov; Yu. G. Kozlov. The effect of channelling on the distribution of electrically active boron and phosphorus atoms intruded into silicon single crystals. Doklady Akademii Nauk, Tome 197 (1971) no. 2, pp. 319-322. http://geodesic.mathdoc.fr/item/DAN_1971_197_2_a19/