Doklady Akademii Nauk, Tome 193 (1970) no. 6, pp. 1283-1285
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A. D. Sablin-Iavorskii; L. M. Belyaev; V. M. Fridkin. Sensibilized photolysis on semiconductors as a principle of long-wave photography. Doklady Akademii Nauk, Tome 193 (1970) no. 6, pp. 1283-1285. http://geodesic.mathdoc.fr/item/DAN_1970_193_6_a19/
@article{DAN_1970_193_6_a19,
author = {A. D. Sablin-Iavorskii and L. M. Belyaev and V. M. Fridkin},
title = {Sensibilized photolysis on semiconductors as a principle of long-wave photography},
journal = {Doklady Akademii Nauk},
pages = {1283--1285},
year = {1970},
volume = {193},
number = {6},
language = {ru},
url = {http://geodesic.mathdoc.fr/item/DAN_1970_193_6_a19/}
}
TY - JOUR
AU - A. D. Sablin-Iavorskii
AU - L. M. Belyaev
AU - V. M. Fridkin
TI - Sensibilized photolysis on semiconductors as a principle of long-wave photography
JO - Doklady Akademii Nauk
PY - 1970
SP - 1283
EP - 1285
VL - 193
IS - 6
UR - http://geodesic.mathdoc.fr/item/DAN_1970_193_6_a19/
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%J Doklady Akademii Nauk
%D 1970
%P 1283-1285
%V 193
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%U http://geodesic.mathdoc.fr/item/DAN_1970_193_6_a19/
%G ru
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