Geodesic
Sensibilized photolysis on semiconductors as a principle of long-wave photography
Doklady Akademii Nauk, Tome 193 (1970) no. 6, pp. 1283-1285.

Voir la notice de l'article provenant de la source Math-Net.Ru

@article{DAN_1970_193_6_a19,
     author = {A. D. Sablin-Iavorskii and L. M. Belyaev and V. M. Fridkin},
     title = {Sensibilized photolysis on semiconductors as a principle of long-wave photography},
     journal = {Doklady Akademii Nauk},
     pages = {1283--1285},
     publisher = {mathdoc},
     volume = {193},
     number = {6},
     year = {1970},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/DAN_1970_193_6_a19/}
}
TY  - JOUR
AU  - A. D. Sablin-Iavorskii
AU  - L. M. Belyaev
AU  - V. M. Fridkin
TI  - Sensibilized photolysis on semiconductors as a principle of long-wave photography
JO  - Doklady Akademii Nauk
PY  - 1970
SP  - 1283
EP  - 1285
VL  - 193
IS  - 6
PB  - mathdoc
UR  - http://geodesic.mathdoc.fr/item/DAN_1970_193_6_a19/
LA  - ru
ID  - DAN_1970_193_6_a19
ER  - 
%0 Journal Article
%A A. D. Sablin-Iavorskii
%A L. M. Belyaev
%A V. M. Fridkin
%T Sensibilized photolysis on semiconductors as a principle of long-wave photography
%J Doklady Akademii Nauk
%D 1970
%P 1283-1285
%V 193
%N 6
%I mathdoc
%U http://geodesic.mathdoc.fr/item/DAN_1970_193_6_a19/
%G ru
%F DAN_1970_193_6_a19
A. D. Sablin-Iavorskii; L. M. Belyaev; V. M. Fridkin. Sensibilized photolysis on semiconductors as a principle of long-wave photography. Doklady Akademii Nauk, Tome 193 (1970) no. 6, pp. 1283-1285. http://geodesic.mathdoc.fr/item/DAN_1970_193_6_a19/