Sensibilized photolysis on semiconductors as a principle of long-wave photography
Doklady Akademii Nauk, Tome 193 (1970) no. 6, pp. 1283-1285
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@article{DAN_1970_193_6_a19,
author = {A. D. Sablin-Iavorskii and L. M. Belyaev and V. M. Fridkin},
title = {Sensibilized photolysis on semiconductors as a principle of long-wave photography},
journal = {Doklady Akademii Nauk},
pages = {1283--1285},
year = {1970},
volume = {193},
number = {6},
language = {ru},
url = {http://geodesic.mathdoc.fr/item/DAN_1970_193_6_a19/}
}
TY - JOUR AU - A. D. Sablin-Iavorskii AU - L. M. Belyaev AU - V. M. Fridkin TI - Sensibilized photolysis on semiconductors as a principle of long-wave photography JO - Doklady Akademii Nauk PY - 1970 SP - 1283 EP - 1285 VL - 193 IS - 6 UR - http://geodesic.mathdoc.fr/item/DAN_1970_193_6_a19/ LA - ru ID - DAN_1970_193_6_a19 ER -
%0 Journal Article %A A. D. Sablin-Iavorskii %A L. M. Belyaev %A V. M. Fridkin %T Sensibilized photolysis on semiconductors as a principle of long-wave photography %J Doklady Akademii Nauk %D 1970 %P 1283-1285 %V 193 %N 6 %U http://geodesic.mathdoc.fr/item/DAN_1970_193_6_a19/ %G ru %F DAN_1970_193_6_a19
A. D. Sablin-Iavorskii; L. M. Belyaev; V. M. Fridkin. Sensibilized photolysis on semiconductors as a principle of long-wave photography. Doklady Akademii Nauk, Tome 193 (1970) no. 6, pp. 1283-1285. http://geodesic.mathdoc.fr/item/DAN_1970_193_6_a19/