Doklady Akademii Nauk, Tome 187 (1969) no. 3, pp. 549-551
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M. M. Myshlyaev; V. I. Nikitenko. High temperature creep of single silicon crystals. Doklady Akademii Nauk, Tome 187 (1969) no. 3, pp. 549-551. http://geodesic.mathdoc.fr/item/DAN_1969_187_3_a18/
@article{DAN_1969_187_3_a18,
author = {M. M. Myshlyaev and V. I. Nikitenko},
title = {High temperature creep of single silicon crystals},
journal = {Doklady Akademii Nauk},
pages = {549--551},
year = {1969},
volume = {187},
number = {3},
language = {ru},
url = {http://geodesic.mathdoc.fr/item/DAN_1969_187_3_a18/}
}
TY - JOUR
AU - M. M. Myshlyaev
AU - V. I. Nikitenko
TI - High temperature creep of single silicon crystals
JO - Doklady Akademii Nauk
PY - 1969
SP - 549
EP - 551
VL - 187
IS - 3
UR - http://geodesic.mathdoc.fr/item/DAN_1969_187_3_a18/
LA - ru
ID - DAN_1969_187_3_a18
ER -
%0 Journal Article
%A M. M. Myshlyaev
%A V. I. Nikitenko
%T High temperature creep of single silicon crystals
%J Doklady Akademii Nauk
%D 1969
%P 549-551
%V 187
%N 3
%U http://geodesic.mathdoc.fr/item/DAN_1969_187_3_a18/
%G ru
%F DAN_1969_187_3_a18
