Geodesic
High temperature creep of single silicon crystals
Doklady Akademii Nauk, Tome 187 (1969) no. 3, pp. 549-551 Cet article a éte moissonné depuis la source Math-Net.Ru

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@article{DAN_1969_187_3_a18,
     author = {M. M. Myshlyaev and V. I. Nikitenko},
     title = {High temperature creep of single silicon crystals},
     journal = {Doklady Akademii Nauk},
     pages = {549--551},
     year = {1969},
     volume = {187},
     number = {3},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/DAN_1969_187_3_a18/}
}
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M. M. Myshlyaev; V. I. Nikitenko. High temperature creep of single silicon crystals. Doklady Akademii Nauk, Tome 187 (1969) no. 3, pp. 549-551. http://geodesic.mathdoc.fr/item/DAN_1969_187_3_a18/