Doklady Akademii Nauk, Tome 181 (1968) no. 1, pp. 46-48
Citer cet article
S. M. Gorodetskii; L. B. Kreinin. Possible mechanism behind the formation of complex radiation defects in silicon, produced by electronic irradiation. Doklady Akademii Nauk, Tome 181 (1968) no. 1, pp. 46-48. http://geodesic.mathdoc.fr/item/DAN_1968_181_1_a11/
@article{DAN_1968_181_1_a11,
author = {S. M. Gorodetskii and L. B. Kreinin},
title = {Possible mechanism behind the formation of complex radiation defects in silicon, produced by electronic irradiation},
journal = {Doklady Akademii Nauk},
pages = {46--48},
year = {1968},
volume = {181},
number = {1},
language = {ru},
url = {http://geodesic.mathdoc.fr/item/DAN_1968_181_1_a11/}
}
TY - JOUR
AU - S. M. Gorodetskii
AU - L. B. Kreinin
TI - Possible mechanism behind the formation of complex radiation defects in silicon, produced by electronic irradiation
JO - Doklady Akademii Nauk
PY - 1968
SP - 46
EP - 48
VL - 181
IS - 1
UR - http://geodesic.mathdoc.fr/item/DAN_1968_181_1_a11/
LA - ru
ID - DAN_1968_181_1_a11
ER -
%0 Journal Article
%A S. M. Gorodetskii
%A L. B. Kreinin
%T Possible mechanism behind the formation of complex radiation defects in silicon, produced by electronic irradiation
%J Doklady Akademii Nauk
%D 1968
%P 46-48
%V 181
%N 1
%U http://geodesic.mathdoc.fr/item/DAN_1968_181_1_a11/
%G ru
%F DAN_1968_181_1_a11
