Geodesic
Possible mechanism behind the formation of complex radiation defects in silicon, produced by electronic irradiation
Doklady Akademii Nauk, Tome 181 (1968) no. 1, pp. 46-48

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@article{DAN_1968_181_1_a11,
     author = {S. M. Gorodetskii and L. B. Kreinin},
     title = {Possible mechanism behind the formation of complex radiation defects in silicon, produced by electronic irradiation},
     journal = {Doklady Akademii Nauk},
     pages = {46--48},
     publisher = {mathdoc},
     volume = {181},
     number = {1},
     year = {1968},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/DAN_1968_181_1_a11/}
}
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S. M. Gorodetskii; L. B. Kreinin. Possible mechanism behind the formation of complex radiation defects in silicon, produced by electronic irradiation. Doklady Akademii Nauk, Tome 181 (1968) no. 1, pp. 46-48. http://geodesic.mathdoc.fr/item/DAN_1968_181_1_a11/