Geodesic
Possible mechanism behind the formation of complex radiation defects in silicon, produced by electronic irradiation
Doklady Akademii Nauk, Tome 181 (1968) no. 1, pp. 46-48.

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@article{DAN_1968_181_1_a11,
     author = {S. M. Gorodetskii and L. B. Kreinin},
     title = {Possible mechanism behind the formation of complex radiation defects in silicon, produced by electronic irradiation},
     journal = {Doklady Akademii Nauk},
     pages = {46--48},
     publisher = {mathdoc},
     volume = {181},
     number = {1},
     year = {1968},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/DAN_1968_181_1_a11/}
}
TY  - JOUR
AU  - S. M. Gorodetskii
AU  - L. B. Kreinin
TI  - Possible mechanism behind the formation of complex radiation defects in silicon, produced by electronic irradiation
JO  - Doklady Akademii Nauk
PY  - 1968
SP  - 46
EP  - 48
VL  - 181
IS  - 1
PB  - mathdoc
UR  - http://geodesic.mathdoc.fr/item/DAN_1968_181_1_a11/
LA  - ru
ID  - DAN_1968_181_1_a11
ER  - 
%0 Journal Article
%A S. M. Gorodetskii
%A L. B. Kreinin
%T Possible mechanism behind the formation of complex radiation defects in silicon, produced by electronic irradiation
%J Doklady Akademii Nauk
%D 1968
%P 46-48
%V 181
%N 1
%I mathdoc
%U http://geodesic.mathdoc.fr/item/DAN_1968_181_1_a11/
%G ru
%F DAN_1968_181_1_a11
S. M. Gorodetskii; L. B. Kreinin. Possible mechanism behind the formation of complex radiation defects in silicon, produced by electronic irradiation. Doklady Akademii Nauk, Tome 181 (1968) no. 1, pp. 46-48. http://geodesic.mathdoc.fr/item/DAN_1968_181_1_a11/