Doklady Akademii Nauk, Tome 180 (1968) no. 1, pp. 52-55
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È. I. Adirovich; L. A. Doubrovsky. Heterocontact between semiconductor and dielectric with an electron trap in the layer close to the contact. Doklady Akademii Nauk, Tome 180 (1968) no. 1, pp. 52-55. http://geodesic.mathdoc.fr/item/DAN_1968_180_1_a13/
@article{DAN_1968_180_1_a13,
author = {\`E. I. Adirovich and L. A. Doubrovsky},
title = {Heterocontact between semiconductor and dielectric with an electron trap in the layer close to the contact},
journal = {Doklady Akademii Nauk},
pages = {52--55},
year = {1968},
volume = {180},
number = {1},
language = {ru},
url = {http://geodesic.mathdoc.fr/item/DAN_1968_180_1_a13/}
}
TY - JOUR
AU - È. I. Adirovich
AU - L. A. Doubrovsky
TI - Heterocontact between semiconductor and dielectric with an electron trap in the layer close to the contact
JO - Doklady Akademii Nauk
PY - 1968
SP - 52
EP - 55
VL - 180
IS - 1
UR - http://geodesic.mathdoc.fr/item/DAN_1968_180_1_a13/
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ID - DAN_1968_180_1_a13
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%T Heterocontact between semiconductor and dielectric with an electron trap in the layer close to the contact
%J Doklady Akademii Nauk
%D 1968
%P 52-55
%V 180
%N 1
%U http://geodesic.mathdoc.fr/item/DAN_1968_180_1_a13/
%G ru
%F DAN_1968_180_1_a13
